IPI072N10N3G

Marking：072N10N；Package：PG-TO220-3；OptiMOS3 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

IPI075N15N3G

Marking：075N15N；Package：PG-TO262-3；3 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

IPP072N10N3G

Marking：072N10N；Package：TO-220；100V N-Channel MOSFET

Features *N-channel,normallevel *Verylowon-resistanceRps(on) *175°Coperatingtemperature *Pb-freeleadplating;RoHScompliant *Idealforhigh-frequencyswitchingandsynchronousrectification *ps=100V *Ip(atVgs=10V)=80A *Rps(on)(atVes=10V)

IPP072N10N3G

Marking：072N10N；Package：PG-TO262-3；OptiMOS3 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

IPP073N13NM6

Marking：073N13N6；Package：PG-TO220-3；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?100avalanchetested ?175°Coperatingtemperature ?Optimizedformotordrivesandbatterypoweredapplications ?Pb-freeleadpla

IPP075N15N3G

Marking：075N15N；Package：PG-TO220-3；3 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

IPP07N03LBG

Marking：07N03LB；Package：PG-TO220-3-1；OptiMOS2 Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel-Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?175°Coperatingtemperature ?dv/dtra

IPTC007N06NM5

Marking：07N06NM5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 60 V

Features ?Optimizedformotordrivesandbatterypoweredapplications ?Optimizedfortopsidecooling ?Highcurrentcapability ?175°Crated ?100avalanchetested ?Superiorthermalperformance ?N-Channel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-2

ISC073N12LM6

Marking：073N12L6；Package：PG-TDSON-8；OptiMOSTM 6 Power-Transistor, 120 V

Features ?N-channel,logiclevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitchingandsynchronousrectification ?

ISC078N12NM6

Marking：078N12N6；Package：PG-TDSON-8；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitchingandsynchronousrectification ?