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KF10N50F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID

KECKEC CORPORATION

KEC株式會(huì)社

KF10N50FR

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,fastreverserecoverytime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies

KECKEC CORPORATION

KEC株式會(huì)社

KF10N50FZ

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID

KECKEC CORPORATION

KEC株式會(huì)社

KF10N50P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID

KECKEC CORPORATION

KEC株式會(huì)社

KF10N50PR

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,fastreverserecoverytime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies

KECKEC CORPORATION

KEC株式會(huì)社

KF10N50PZ

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID

KECKEC CORPORATION

KEC株式會(huì)社

KSM10N50CF

500VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

RFH10N50

10A,450Vand500V,0.600Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

Intersil

Intersil Corporation

RFM10N50

10A,450Vand500V,0.600Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

Intersil

Intersil Corporation

RFP-10N50TV

AluminumNitrideTerminations

ANARENAnaren Microwave

安倫

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FAIRCHILD/仙童
23+
TO-220220F3P
385114
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HARRIS
2023+
TO-220
8700
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Harris
21+
25000
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24+
N/A
67000
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UTC/友順
2023+
TO-220
50000
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U
TO-220AB
22+
6000
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UTC/友順
23+
TO-220
6800
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UTC
24+
TO-TO-220F
12300
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INFINEON
23+
TO-252
7000
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VBsemi
21+
TO220F
10026
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更多10N50C供應(yīng)商 更新時(shí)間2025-4-2 17:19:00