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12N60

12 Amps, 600/650 Volts N-CHANNEL MOSFET

TheUTC12N60areN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)whichareproducedusingUTCsproprietary,planarstripe,DMOStechnology. Thesedevicesaresuitedforhighefficiencyswitchmodepowersupply.Tominimizeon-stateresistance,providesuperiorswitchingp

UTCUnisonic Technologies

友順友順科技股份有限公司

12N60A4

600V, SMPS Series N-Channel IGBTs

TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4S9AareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

12N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

12N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st

Intersil

Intersil Corporation

12N60C

12 Amps, 600/650 Volts N-CHANNEL MOSFET

TheUTC12N60areN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)whichareproducedusingUTCsproprietary,planarstripe,DMOStechnology. Thesedevicesaresuitedforhighefficiencyswitchmodepowersupply.Tominimizeon-stateresistance,providesuperiorswitchingp

UTCUnisonic Technologies

友順友順科技股份有限公司

12N60C3D

24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE

TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

12N65

N-Channel MOSFET

■Features OriginativeNewDesign SuperiorAvalancheRuggedTechnology RobustGateOxideTechnology VeryLowIntrinsicCapacitances ExcellentSwitchingCharacteristics UnrivalledGateCharge:38nC(Typ.) ExtendedSafeOperatingArea LowerRDS(ON):0.67?(Typ.)@VGS=10V 100%AvalancheTe

HAOHAIHAOHAI ELECTRONICS CO., LTD.

浩海電子深圳市浩海電子有限公司

12N65

12A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC12N65areN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)whichareproducedbyusingUTC’sproprietary,planarstripeandDMOStechnology.Thesedevicesaresuitedforhighefficiencyswitchmodepowersupply.Tominimizeon-stateresistance,providesupe

UTCUnisonic Technologies

友順友順科技股份有限公司

12N65

650V N-Channel Power MOSFET

Features RDS(ON)

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

12N65G-T2Q-T

12A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC12N65areN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)whichareproducedbyusingUTC’sproprietary,planarstripeandDMOStechnology.Thesedevicesaresuitedforhighefficiencyswitchmodepowersupply.Tominimizeon-stateresistance,providesupe

UTCUnisonic Technologies

友順友順科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    12N

  • 制造商：

    UTC-IC

  • 制造商全稱：

    UTC-IC

  • 功能描述：

    12A, 100V N-CHANNEL POWER MOSFET

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UTC/友順
2024
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502790
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NULL
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6650
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30146
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UTC
20+
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38900
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UTC/友順
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20000
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VBsemi(臺(tái)灣微碧)
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UTC/友順
2022+
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23919
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VBSEMI臺(tái)灣微碧
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更多12N供應(yīng)商 更新時(shí)間2025-4-21 15:14:00

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