13005B中文資料意法半導體數據手冊PDF規(guī)格書

DESCRIPTION

The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

■ MEDIUM VOLTAGE CAPABILITY

■ NPN TRANSISTORS

■ LOW SPREAD OF DYNAMIC PARAMETERS

■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

■ VERY HIGH SWITCHING SPEED

■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”)

APPLICATIONS:

■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

■ SWITCH MODE POWER SUPPLIES