STU16N65M2

Marking：16N65M2；Package：IPAK；N-channel 650 V, 0.32 ??typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages

Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh?M2technology. Thankstotheirstriplayoutandimprovedvertical structure,thedevicesexhibitlowon-resistance andoptimizedswitchingcharacteristics,rendering themsuitableforthemostdemandinghigh effic

SPA16N50C3

Marking：16N50C3；Package：PG-TO220FP；New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

SPI16N50C3

Marking：16N50C3；Package：PG-TO262；New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

SPP16N50C3

Marking：16N50C3；Package：PG-TO220；New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

STL16N60M2

Marking：16N60M2；Package：PowerFLAT5x6HV；N-channel 600 V, 0.290 廓 typ., 8 A MDmesh??M2 Power MOSFET in a PowerFLAT??5x6 HV package

STL16N65M2

Marking：16N65M2；Package：PowerFLAT5x6HV；N-channel 650 V, 0.325 ??typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT??5x6 HV package

YFW16N50A6

Marking：16N50AP；Package：TO-247；16A 500V N-channel enhanced field effect transistor

YFW16N50A7

Marking：16N50APS；Package：TO-247S；16A 500V N-channel enhanced field effect transistor

YFW16N50A8

Marking：16N50AF；Package：TO-220F(1.3mm)；16A 500V N-channel enhanced field effect transistor

YFW16N65A6

Marking：16N65AP；Package：TO-247；16A 650V N-channel enhancement mode field effect transistor