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18N60M2

N-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB18N60M2

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=10V APPLICATIONS ·Switching ·LLCconverters,resonantconverters

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STB18N60M2

N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Application ?Switchingapplications ?LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh?M2

STMICROELECTRONICSSTMicroelectronics

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STB18N60M2

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

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STF18N60M2

Lowgateinputresistance

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencycon

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STF18N60M2

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchingapplicati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STFH18N60M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

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STFU18N60M2

N-channel600V,0.255typ.,13AMDmeshM2PowerMOSFETinaTO-220FPultranarrowleadspackage

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STI18N60M2

N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Application ?Switchingapplications ?LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh?M2

STMICROELECTRONICSSTMicroelectronics

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STL18N60M2

N-channel600V,0.278廓typ.,9AMDmeshIIPlus??lowQgPowerMOSFETinaPowerFLAT??5x6HVpackage

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh?M2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencyco

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
23+/24+
TO-247
29880
原裝MOS管(場效應(yīng)管).
 詢價
SANYO/三洋
23+
TO-220F
69820
終端可以免費供樣,支持BOM配單!
 詢價
ST
23+
TO-247TO-3P
16900
正規(guī)渠道,只有原裝!
 詢價
ST/意法
23+
DFN-85x6
6000
專注配單,只做原裝進口現(xiàn)貨
 詢價
ST/意法
23+
DFN-85x6
6000
專注配單,只做原裝進口現(xiàn)貨
 詢價
ST
21+
TO-247TO-3P
23480
詢價
ST
25+
TO-247TO-3P
16900
原裝，請咨詢
 詢價
UTC/友順
24+
TO-220F1
50000
只做原裝，歡迎詢價，量大價優(yōu)
 詢價
UTC/友順
24+
TO-220F1
50000
全新原裝,一手貨源,全場熱賣!
 詢價
UTC/友順
TO-3P
22+
6000
十年配單,只做原裝
 詢價
更多18N60M2供應(yīng)商 更新時間2025-5-21 11:42:00

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