M8050HQLT1G

Marking：1HC；Package：SOT-23；General Purpose Transistors NPN Silicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

M8050HQLT3G

Marking：1HC；Package：SOT-23；General Purpose Transistors NPN Silicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

M8050HRLT1G

Marking：1HE；Package：SOT-23；General Purpose Transistors NPN Silicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

M8050HRLT3G

Marking：1HE；Package：SOT-23；General Purpose Transistors NPN Silicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

M8050HSLT1G

Marking：1HG；Package：SOT-23；General Purpose Transistors NPN Silicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

M8050HSLT3G

Marking：1HG；Package：SOT-23；General Purpose Transistors NPN Silicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

PSMN1R0-40YSH

Marking：1H0S40J；Package：SOT1023；N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology

1.Generaldescription 290Amp,standardlevelgatedriveN-channelenhancementmodeMOSFETin175°CLFPAK56E packageusingadvancedTrenchMOSSuperjunctiontechnology.Thisproducthasbeendesigned andqualifiedforhighperformancepowerswitchingapplications. 2.Featuresandbenefits ?

PSMN1R5-25MLH

Marking：1H525L；Package：SOT1210；N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology

1.Generaldescription LogiclevelgatedriveN-channelenhancementmodeMOSFETinLFPAK33package. NextPowerS3technologydeliverslowRDSon,lowIDSSleakageandhighefficiency.Ratedto150A andoptimizedwithlowgateresistance(RG)forfast-switchingapplications. 2.Featuresandbenef

PSMN1R5-50YLH

Marking：1H550L；Package：SOT1023；N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E

1.Generaldescription 200Ampcontinuouscurrent,logiclevelgatedrive,N-channelenhancementmodeMOSFET inLFPAK56Epackage.PartoftheASFETsforBatteryIsolationandDCMotorcontrolfamily andusingNexperia’sunique“SchottkyPlus”technologydelivershighefficiencyandlowspiking

PSMN1R6-30MLH

Marking：1H630L；Package：SOT1210；N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology

1.Generaldescription LogiclevelgatedriveN-channelenhancementmodeMOSFETinLFPAK33package. NextPowerS3technologydeliverslowRDSon,lowIDSSleakageandhighefficiency.Ratedto160A andoptimizedforDCloadswitchandhot-swapapplications. 2.Featuresandbenefits ?Optimized