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1M110Z

Glass Passivated Junction Silicon Zener Diode

Features ?Lowprofilepackage ?Built-instrainrelief ?Glasspassivatedjunction ?Lowinductance ?TypicalIRlessthan5uAabove11V ?Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ?PlasticpackagehasUnderwriters LaboratoryFlammabilityCl

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

1M110Z

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

VOLTAGE-11TO200VoltsPower-1.0Watt FEATURES ?Lowprofilepackage ?Built-instrainrelief ?Glasspassivatedjunction ?Lowinductance ?TypicalIRlessthan5.0Aabove11V ?Hightemperaturesoldering:260°C/10secondsatterminals ?PlasticpackagehasUnderwritersLaboratory

TRSYS

Transys Electronics

1M110Z

Glass Passivated Junction Silicon Zener Diode

Features ?Lowprofilepackage ?Built-instrainrelief ?Glasspassivatedjunction ?Lowinductance ?TypicalIRlessthan5uAabove11V ?Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ?PlasticpackagehasUnderwriters LaboratoryFlammabilityCl

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

1M110ZS10

1.0 WATT SURMETIC 30 SILICON ZENER DIODES

500mWDO-35GlassZenerVoltageRegulatorDiodes GENERALDATAAPPLICABLETOALLSERIESINTHISGROUP500MilliwattHermeticallySealedGlassSiliconZenerDiodes Thisisacompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcap

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

1M120Z

Glass Passivated Junction Silicon Zener Diode

Features ?Lowprofilepackage ?Built-instrainrelief ?Glasspassivatedjunction ?Lowinductance ?TypicalIRlessthan5uAabove11V ?Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ?PlasticpackagehasUnderwriters LaboratoryFlammabilityCl

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

1M120Z

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

VOLTAGE-11TO200VoltsPower-1.0Watt FEATURES ?Lowprofilepackage ?Built-instrainrelief ?Glasspassivatedjunction ?Lowinductance ?TypicalIRlessthan5.0Aabove11V ?Hightemperaturesoldering:260°C/10secondsatterminals ?PlasticpackagehasUnderwritersLaboratory

TRSYS

Transys Electronics

1M120Z

Glass Passivated Junction Silicon Zener Diode

Features ?Lowprofilepackage ?Built-instrainrelief ?Glasspassivatedjunction ?Lowinductance ?TypicalIRlessthan5uAabove11V ?Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ?PlasticpackagehasUnderwriters LaboratoryFlammabilityCl

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

1M120ZS10

1.0 WATT SURMETIC 30 SILICON ZENER DIODES

500mWDO-35GlassZenerVoltageRegulatorDiodes GENERALDATAAPPLICABLETOALLSERIESINTHISGROUP500MilliwattHermeticallySealedGlassSiliconZenerDiodes Thisisacompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcap

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

1M130Z

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

VOLTAGE-11TO200VoltsPower-1.0Watt FEATURES ?Lowprofilepackage ?Built-instrainrelief ?Glasspassivatedjunction ?Lowinductance ?TypicalIRlessthan5.0Aabove11V ?Hightemperaturesoldering:260°C/10secondsatterminals ?PlasticpackagehasUnderwritersLaboratory

TRSYS

Transys Electronics

1M130Z

Glass Passivated Junction Silicon Zener Diode

Features ?Lowprofilepackage ?Built-instrainrelief ?Glasspassivatedjunction ?Lowinductance ?TypicalIRlessthan5uAabove11V ?Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ?PlasticpackagehasUnderwriters LaboratoryFlammabilityCl

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    1M110Z

  • 制造商：

    Taiwan Semiconductor Corporation

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 齊納 - 單

  • 包裝：

    卷帶（TR）

  • 容差：

    ±5%

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    DO-204AL，DO-41，軸向

  • 供應(yīng)商器件封裝：

    DO-204AL（DO-41）

  • 描述：

    DIODE ZENER 110V 1W DO204AL

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
N/A
70000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
TAIWAN
1809+
DO-204
16750
就找我吧!--邀您體驗愉快問購元件!
 詢價
UNI-ROYAL
2306+
NA
6680
原裝正品公司現(xiàn)貨,實單來談
 詢價
Taiwan Semiconductor
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
更多1M1供應(yīng)商 更新時間2025-4-4 11:06:00

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