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1N5817A-G

SchottkyBarrierRectifiers

Features -Epitaxialconstruction. -Lowforwardvoltagedrop. -Metal-Semiconductorjunctionwithguardring. -Highcurrentcapability. -Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

1N5817-B

GuardRingDieConstructionforTransientProtection

DIODES

Diodes Incorporated

1N5817-B

1.0ASCHOTTKYBARRIERRECTIFIER

DIODES

Diodes Incorporated

1N5817B-G

SchottkyBarrierRectifiers

Features -Epitaxialconstruction. -Lowforwardvoltagedrop. -Metal-Semiconductorjunctionwithguardring. -Highcurrentcapability. -Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

1N5817-E

SchottkyBarrierRectifiersReverseVoltage20to40VForwardCurrent1.0A

Feature&Dimensions *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardingforovervoltageprotection *Hightempera

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

1N5817FL

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司

1N5817G

1AmpSchottkyRectifier

1AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●HighReliability ●HighCurrentCapability

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5817G

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5817G

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5817-G

SchottkyBarrierRectifiers

Features -Epitaxialconstruction. -Lowforwardvoltagedrop. -Metal-Semiconductorjunctionwithguardring. -Highcurrentcapability. -Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ON
24+
DO-41
6430
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TOSHIBA
SOD323
17432
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TOSHIBA
11+PB
SOD323
2293
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TOSHIBA
21+
SOD323
2293
原裝現(xiàn)貨假一賠十
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TOSHIBA
22+
SOD323
25000
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十
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TOSHIBA
11+
SOD323
2287
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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24+
SMA
81000
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TOSHIBA/東芝
22+
DO214AC
20000
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TOSHIBA/東芝
21+
DO214AC
1062
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DO-214AC
50000
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更多1N5817(RL)供應(yīng)商 更新時(shí)間2025-2-14 13:36:00

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