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1N6263W-7-F

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ?LowForwardVoltageDrop ?GuardRingConstructionforTransientProtection ?FastSwitchingTime ?LowReverseCapacitance ?SurfaceMountPackageIdeallySuitedforAutomaticInsertion

DIODES

Diodes Incorporated

1N6263WS

SILICON SCHOTTKY BARRIER DIODE

SILICONSCHOTTKYBARRIERDIODEforgeneralpurposeapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司

1N6263WT

SILICON SCHOTTKY BARRIER DIODE

SILICONSCHOTTKYBARRIERDIODEforgeneralpurposeapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司

1N6264

GaAs INFRARED EMITTING DIODE

DESCRIPTION ?The1N6264isa940nmLEDinanarrowangle,TO-46package. FEATURES ?Goodopticaltomechanicalalignment ?MechanicallyandwavelengthmatchedtotheTO-18seriesphototransistor ?Hermeticallysealedpackage ?Highirradiancelevel ?(*)IndicatesJEDECregisteredvalues

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

1N6265

GaAs INFRARED EMITTING DIODE

DESCRIPTION ?The1N6265isa940nmLEDinanarrowangle,TO-46package. FEATURES ?Goodopticaltomechanicalalignment ?MechanicallyandwavelengthmatchedtotheTO-18seriesphototransistor ?Hermeticallysealedpackage ?Highirradiancelevel ?(*)IndicatesJEDECregisteredvalues

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

1N6266

GaAs INFRARED EMITTING DIODE

DESCRIPTION ?The1N6266isa940nmLEDinanarrowangle,TO-46package. FEATURES ?Goodopticaltomechanicalalignment ?MechanicallyandwavelengthmatchedtotheTO-18seriesphototransistor ?Hermeticallysealedpackage ?Highirradiancelevel ?(*)IndicatesJEDECregisteredvalues

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

1N6267

Transient Voltage Suppressors Peak Pulse Power 1500W Breakdown Voltage 6.8 to 550V

PeakPulsePower1500WBreakdownVoltage6.8to550V Features ●PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 ●Glasspassivatedjunction ●1500Wpeakpulsepowercapabililtyon10/1000uswaveform, repetitionrate(dutycycle):0.05 ●Excellentclamping

Good-Ark

GOOD-ARK Electronics

1N6267

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE-6.8TO440Volts1500WattPeakPower5.0WattSteadyState FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O ?GlasspassivatedchipjunctioninMoldedPlasticpackage ?1500Wsurgecapabilityat1ms ?Excellentclampingcapability ?Low

MDE

MDE Semiconductor, Inc.

1N6267

1500 WattsTransient Voltage Suppressor Diodes

Features ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇1500Wsurgecapabilityat10x1000uswaveform ◇Excellentclampingcapability ◇LowDynamicimpedance ◇Fastresponsetime:Typicallylessthan1.0psfrom0voltstoVBRforunidirectionaland5.0ns

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

1N6267

BREAKDOWN VOLTAGE: 6.8 --- 200V PEAK PULSE POWER: 1500 W

Features ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇1500Wsurgecapabilityat10x1000uswaveform ◇Excellentclampingcapability ◇LowDynamicimpedance ◇Fastresponsetime:Typicallylessthan1.0psfrom0voltstoVBRforunidirectionaland5.0ns

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

詳細(xì)參數(shù)

  • 型號：

    1N62

  • 功能描述：

    GOLD BONDED DIODES

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
BKC
N/A
3069
詢價(jià)
24+
N/A
65000
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
TOSHIBA
23+
SOD123
9526
詢價(jià)
GI
24+/25+
1200
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
ON
24+
MOSRB
6000
進(jìn)口原裝正品假一賠十,貨期7-10天
 詢價(jià)
EIC
24+
1000
詢價(jià)
NJS
16+
NA
8800
原裝現(xiàn)貨,貨真價(jià)優(yōu)
 詢價(jià)
ON
24+
N/A
5642
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
 詢價(jià)
SUNMATE一森美特
24+
SOD-123
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
GOOD-ARK
23+
NA
39960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
更多1N62供應(yīng)商 更新時(shí)間2025-4-24 16:20:00

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