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1N659

GENERAL PURPOSE DIFFUSED SILICON PLANAR DIODES

GENERALPURPOSEDIFFUSEDSILICONPLANARDIODES ?VF...1.0V(MAX)@6.0mA ?trr...300ns(MAX)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

1N659A

silicon diode

SILICONDIODE

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

1N65A

0.5A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC1N65AisahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsatpowersuppli

UTCUnisonic Technologies

友順友順科技股份有限公司

1N65AG-T92-B

0.5A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC1N65AisahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsatpowersuppli

UTCUnisonic Technologies

友順友順科技股份有限公司

1N65AG-T92-K

0.5A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC1N65AisahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsatpowersuppli

UTCUnisonic Technologies

友順友順科技股份有限公司

1N65AG-T92-R

0.5A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC1N65AisahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsatpowersuppli

UTCUnisonic Technologies

友順友順科技股份有限公司

1N65AL-T92-B

0.5A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC1N65AisahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsatpowersuppli

UTCUnisonic Technologies

友順友順科技股份有限公司

1N65AL-T92-K

0.5A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC1N65AisahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsatpowersuppli

UTCUnisonic Technologies

友順友順科技股份有限公司

1N65AL-T92-R

0.5A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC1N65AisahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsatpowersuppli

UTCUnisonic Technologies

友順友順科技股份有限公司

1N65G-AA3-R

1.2A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC1N65isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinthehighspeedswitchingapplicationsofpo

UTCUnisonic Technologies

友順友順科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    1N65

  • 制造商：

    UTC-IC

  • 制造商全稱(chēng)：

    UTC-IC

  • 功能描述：

    1.2A, 650V N-CHANNEL POWER MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
UMW/友臺(tái)半導(dǎo)體
22+
SOT-223
20000
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2022+
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7500
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UMW/友臺(tái)半導(dǎo)體
23+
SOT-223
985000
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UMW/友臺(tái)半導(dǎo)體
24+
NA/
115240
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30000
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7500
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UTC
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12300
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VOLTAGEMULTIPLIER
24+
281
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FAIRCHILD
23+
NA
19960
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VMI
23+
NA
114
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更多1N65供應(yīng)商 更新時(shí)間2025-4-23 14:50:00

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