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1S20_V01

SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere

FEATURES *Lowpowerloss,highefficiency *Lowleakage *Lowforwardvoltage *Highcurrentcapability *Highspeedswitching *Highsurgecapabitity *Highreliability

RECTRON

Rectron Semiconductor

1S200

SCHOTTKY BARRIER RECTIFIER

ReverseVoltage-20to200VoltsForwardCurrent-1.0Ampere FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ?Metalsiliconjunction,majoritycarrierconduction ?Lowpowerloss,highefficiency ?Highcurrentcapability,Lowforwardvoltagedrop ?

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集團(tuán)濟(jì)南晶恒電子有限責(zé)任公司

1S200

SCHOTTKY BARRIER RECTIFIER

ReverseVoltage-20to200VoltsForwardCurrent-1.0Ampere FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ?Metalsiliconjunction,majoritycarrierconduction ?Lowpowerloss,highefficiency ?Highcurrentcapability,Lowforwardvoltagedrop ?

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

1S200

Schottky Barrier Rectifier

Features ●Guardringforovervoltageprotection ●Verysmallconductionlosses ●Extremelyfastswitching ●Highforwardsurgecapability ●Highfrequencyoperation ●Solderdip275°Cmax.7s,perJESD22-B106 TypicalApplications Foruseinlowvoltagehighfrequencyinverters,free

YANGJIEYangzhou yangjie electronic co., ltd

揚州揚杰電子揚州揚杰電子科技股份有限公司

1S200

SCHOTTKY BARRIER RECTIFIER

FEATURES PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highcurrentcapability,Lowforwardvoltagedrop Highsurgecapability Foruseinlowvoltage,highfrequencyinverters

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三陽電子三陽電子有限公司

1S2074

Silicon Epitaxial Planar Diode for High Speed Switching

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching Features ?Lowcapacitance.(C=3.0pFmax) ?Shortreverserecoverytime.(trr=4.0nsmax) ?Highreliabilitywithglassseal.

HitachiHitachi Semiconductor

日立日立公司

1S2074H

Silicon Epitaxial Planar Diode for High Speed Switching

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching Features ?Lowcapacitance.(C=3.0pFmax) ?Shortreverserecoverytime.(trr=4.0nsmax) ?Highreliabilitywithglassseal.

HitachiHitachi Semiconductor

日立日立公司

1S2075

Silicon Epitaxial Planar Diode for High Speed Switching

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching Features ?Lowcapacitance.(C=3.5pFmax) ?Shortreverserecoverytime.(trr=8.0nsmax) ?Highreliabilitywithglassseal.

HitachiHitachi Semiconductor

日立日立公司

1S2075K

Silicon Epitaxial Planar Diode for High Speed Switching

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching Features ?Lowcapacitance.(C=3.5pFmax) ?Shortreverserecoverytime.(trr=8.0nsmax) ?Highreliabilitywithglassseal.

HitachiHitachi Semiconductor

日立日立公司

1S2076A

Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator

Features ?Lowcapacitance.(C=3.0pFmax) ?Shortreverserecoverytime.(trr=8.0nsmax) ?Highreliabilitywithglassseal.

HitachiHitachi Semiconductor

日立日立公司

詳細(xì)參數(shù)

  • 型號：

    1S20

  • 功能描述：

    肖特基二極管與整流器 Schottky Barr Rect 1A,20V

  • RoHS：

    否

  • 制造商：

    Skyworks Solutions, Inc.

  • 產(chǎn)品：

    Schottky Diodes

  • 峰值反向電壓：

    2 V

  • 正向連續(xù)電流：

    50 mA

  • 配置：

    Crossover Quad

  • 正向電壓下降：

    370 mV

  • 最大功率耗散：

    75 mW

  • 工作溫度范圍：

    - 65 C to + 150 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    SOT-143

  • 封裝：

    Reel

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更多1S20供應(yīng)商 更新時間2025-3-29 9:30:00

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