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BD2051AFJ

1chHighSideSwitchICsforUSBDevicesandMemoryCards

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BD2051AFJ

1.0ACurrentLimitHighSideSwitchICs

Description SinglechannelhighsideswitchICforUSBportisahighsideswitchhavingovercurrentprotectionusedinpowersupplylineofuniversalserialbus(USB). N-channelpowerMOSFEToflowonresistanceandlowsupplycurrentarerealizedinthisIC. And,overcurrentdetectioncircu

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

CZRB2051

SurfaceMountZenerDiode

Voltage:11-100VoltsPower:2.0Watt Features -Forsurfacemountedapplicationsinordertooptimizeboardspace -Lowprofilepackage -Built-instrainrelief -Glasspassivatedjunction -Lowinductance -Excellentclampingcapability -TypicalIlessthan1uAabove11VD -Highte

COMCHIPComchip Technology

典琦典琦科技股份有限公司

DK2051

HIGHPERFORMANCEWIDEBANDRFPLL/VCOWITHINTEGRATEDRFMIXERS

RFMD

RF Micro Devices

EPC2051

EnhancementModePowerTransistor

EPC-COEfficient Power Conversion Corporation.

高效變流技術(shù)高效變流技術(shù)公司

FTS2051

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice

Features ?LowON-resistance. ?4Vdrive. ?Mountingheight1.1mm.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

GRF2051

Ultra-LowNoiseAmplifierTuningRange:0.7–3.8GHz

Features Reference:5V/70mA/1.9GHz ?Gain:19.0dB ?EvalBoardNF:0.37dB ?OP1dB:21.0dBm ?OIP3:36.0dBm ?FlexibleBiasVoltageandCurrent ?Process:GaAspHEMT Applications ?CellularInfrastructure ?SmallCellsandCellularRepeaters ?DistributedAntennaSystems ?HighPer

GUERRILLA

Guerrilla RF, Inc.

HAT2051T

SiliconNChannelPowerMOSFETHighSpeedPowerSwitching

Features ?Lowon-resistance ?Capableof2.5Vgatedrive ?Lowdrivecurrent ?Highdensitymounting

HitachiHitachi Semiconductor

日立日立公司

HAT2051T

SiliconNChannelPowerMOSFETHighSpeedPowerSwitching

Features ?Lowon-resistance ?Capableof2.5Vgatedrive ?Lowdrivecurrent ?Highdensitymounting

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ICD2051

DualProgrammableClockGenerator

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

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更多2051B供應(yīng)商 更新時(shí)間2025-4-5 16:30:00