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20N60B

HiPerFAST IGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features ?InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD ?Highcurrenthandlingcapability ?LatestgenerationHDMOSTMprocess ?MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

20N60BD1

HiPerFAST IGBT with Diode

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features ?Internationalstandardpackages ?HighfrequencyIGBTandantiparallelFREDinonepackage ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on -drivesimplicity Applications ?Unin

IXYS

IXYS Corporation

20N60CFD

HITACHIEncapsulation,DIP16

HitachiHitachi Semiconductor

日立日立公司

20N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

20N60CFD

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

20N60CFD

CoolMOSPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Periodicavalancherated ?Qualifiedforindustrialgradeapplicationsaccording

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AFGB20N60SFD

Usingnovelfield?stopIGBTtechnology

Features ?HighCurrentCapability ?LowSaturationVoltage:VCE(sat)=2.2V@IC=20A ?HighInputImpedance ?FastSwitching ?AEC?Q101QualifiedtoAutomotiveRequirements ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導體安森美半導體公司

AFGB20N60SFD-BW

Usingnovelfield?stopIGBTtechnology

Features ?HighCurrentCapability ?LowSaturationVoltage:VCE(sat)=2.2V@IC=20A ?HighInputImpedance ?FastSwitching ?AEC?Q101QualifiedtoAutomotiveRequirements ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導體安森美半導體公司

AIKB20N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-paralleldiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIKP20N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlleddiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    20N60B

  • 制造商：

    IXYS

  • 制造商全稱：

    IXYS Corporation

  • 功能描述：

    HiPerFAST IGBT

供應商型號品牌批號封裝庫存備注價格
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
仙童/英飛凌/哈里斯
23+
TO-247
3000
全新原裝
 詢價
FAIRCHILD/仙童
22+
TO-262
20000
保證原裝正品,假一陪十
 詢價
FAIRCHILD/仙童
23+
TO-262
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
FAIRCHILD/仙童
22+
TO-262
100000
代理渠道/只做原裝/可含稅
 詢價
INFINEO
17+
NA
9998
全新原裝現(xiàn)貨
 詢價
FAIRCHILD
2023+
TO-220
8700
原裝現(xiàn)貨
 詢價
24+
TO220
4231
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
INFINEON英飛凌
23+
TO-3P
5000
原裝正品,假一罰十
 詢價
24+
西門子(3P)
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
更多20N60B供應商 更新時間2025-4-4 9:01:00

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