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ESDTU5V0A1

Marking：21；Package：DFN1006；ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4.5A(8/20μs) RoHSCompliant

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

IP4223CZ6

Marking：21；Package：SOT457；Dual USB 2.0 integrated ESD protection

1.1Generaldescription TheIP4223CZ6isdesignedtoprotectI/Olinessensitivetocapacitiveload,suchas USB2.0,ethernet,DigitalVideoInterface(DVI)andsoon,fromdamagedueto ElectroStaticDischarge(ESD).Itincorporatesfourpairsofultralowcapacitancerail-to-rail ESDprotec

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

NJW4104U3-33B-T1

Marking：21；Package：SOT-89-3；45V Io=200mA Ultra low Quiescent current LDO

■FEATURES ●LowQuiescentCurrent5.5μAtyp.(Aversion) 5.0μAtyp.(Bversion) ●OperatingVoltage4.0Vto40V ●OperatingTemperatureTa=-40Cto125°C ●OutputVoltageAccuracyVO1.0(Ta=25C) VO2.0(Ta=-40Cto125°C) ●OutputCurrentIO(min.)=200mA ●ON/OFFControlAver.only ●Corres

NJRCNew Japan Radio

新日本無(wú)線株式會(huì)社

PDTA123ET

Marking：21；Package：SOT23；PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTA123ET

Marking：21；Package：SOT23；PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver. DESCRIPTION PNPresistor-equippedtransistor(see“Simplif

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PEMH13

Marking：21；Package：SOT666；50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

1.Generaldescription NPN/NPNdoubleResistor-EquippedTransistor(RET)inanultrasmallandflatleadSOT666 Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PEMD13 PNP/PNPcomplement:PEMB13 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasr

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PESD5V0F1BL

Marking：21；Package：DFN1006；ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4.5A(8/20μs) RoHSCompliant

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

PESD5V0X1BL

Marking：21；Package：DFN1006；ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4.5A(8/20μs) RoHSCompliant

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

PESDMC2FD5VB

Marking：21；Package：DFN1006；ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4.5A(8/20μs) RoHSCompliant

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

PESDR0521P1

Marking：21；Package：DFN1006-2；Ultra small package: 1.0x0.6x0.5mm

DescriptionThePESDR0521P1isabi-directionalTVSdiode,utilizingleadingmonolithicsilicontechnologytoprovidefastresponsetimeandlowESDclampingvoltage,makingthisdeviceanidealsolutionforprotectingvoltagesensitivehigh-speeddatalines.ThePESDR0521P1hasanultra-lowcapacitance

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

替換型號(hào)

詳細(xì)參數(shù)

  • 型號(hào)：

    21

  • 制造商：

    Harting Technology Group

  • 功能描述：

    SEALING CAP M12 Plastic

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TI
1114+
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730
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TI
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SOP20
730
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Superior Electric
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93
全新原裝 貨期兩周
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APEM
20+
開(kāi)關(guān)元件
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就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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BURR-BROWN
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SSOP16
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只做原裝,原裝,假一罰十
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2Pai Semi/榮湃
2024+
SOIC-8
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2Pai Semi(榮湃)
2025+
SOIC-8
52637
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中性
DIP
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MICROCHIP/微芯
2447
SSOP28
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
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MICROCHIP/微芯
24+
TSSOP
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
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更多21供應(yīng)商 更新時(shí)間2025-3-30 14:00:00

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