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CEH2321A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-4.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=75mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2321A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3.7A,RDS(ON)=60mW@VGS=-4.5V. RDS(ON)=80mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2321B

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3.9A,RDS(ON)=52mW@VGS=-4.5V. RDS(ON)=72mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2321

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-3.8A,RDS(ON)=55m?@VGS=-4.5V. RDS(ON)=80m?@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2321

P-Channel20-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitch ?PASwitch ?DC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

CES2321

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=62mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2321A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-3.8A,RDS(ON)=55mΩ@VGS=-4.5V. RDS(ON)=75mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Lead-freeplating;RoHScompliant. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2321A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=75mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2321B

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3.9A,RDS(ON)=52mW@VGS=-4.5V. RDS(ON)=72mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM2321PT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT3.8Ampere FEATURE *Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

詳細參數(shù)

  • 型號：

    2321VY

  • 制造商：

    Hubbell Premise Wiring

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12000
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