24FC512T-I/ST集成電路（IC）的存儲器規(guī)格書PDF中文資料

24FC512T-I/ST屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產的24FC512T-I/ST存儲器存儲器是集成電路上用作數據存儲設備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description:

The Microchip Technology Inc. 24AA024/24LC024/24AA025/24LC025 is a 2 Kbit Serial Electrically Erasable PROM with a voltage range of 1.7V to 5.5V. The device is organized as a single block of 256 x 8-bit memory with a 2-wire serial interface. Low current design permits operation with typical standby and active currents of only 1 μA and 1 mA, respectively. The device has a page write capability for up to 16 bytes of data. Functional address lines allow the connection of up to eight 24AA024/24LC024/24AA025/24LC025 devices on the same bus for up to 16K bits of contiguous EEPROM memory. The device is available in the standard 8-pin PDIP, 8-pin SOIC (3.90 mm), TSSOP, 2x3 DFN and TDFN and MSOP packages.

Features:

? Single Supply with Operation from 1.7V to 5.5V

for 24AA024/24AA025 Devices, 2.5V for 24LC024/24LC025 Devices

? Low-Power CMOS Technology:

- Read current 1 mA, typical

- Standby current 1 μA, typical

? 2-Wire Serial Interface, I2C? Compatible

? Cascadable up to Eight Devices

? Schmitt Trigger Inputs for Noise Suppression

? Output Slope Control to Eliminate Ground Bounce

? 100 kHz and 400 kHz Clock Compatibility

? Page Write Time 5 ms Maximum

? Self-timed Erase/Write Cycle

? 16-Byte Page Write Buffer

? Hardware Write-Protect on 24XX024 Devices

? ESD Protection >4,000V

? More than 1 Million Erase/Write Cycles

? Data Retention >200 years

? Factory Programming Available

? Packages include 8-lead PDIP, SOIC, TSSOP, DFN, TDFN and MSOP

? Pb-Free and RoHS Compliant

? Temperature Ranges:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C