25N60N中文資料安森美半導體數(shù)據(jù)手冊PDF規(guī)格書

Description

The SUPREMOS? MOSFET is ON Semiconductor’s next

generation of high voltage super?junction (SJ) technology employing

a deep trench filling process that differentiates it from the

conventional SJ MOSFETs. This advanced technology and precise

process control provides lowest Rsp on?resistance, superior switching

performance and ruggedness. SUPREMOS MOSFET is suitable for

high frequency switching power converter applications such as PFC,

server/telecom power, FPD TV power, ATX power, and industrial

power applications.

Features

? RDS(on) = 108 m (Typ.) @ VGS = 10 V, ID = 12.5 A

? Ultra Low Gate Charge (Typ. Qg = 57 nC)

? Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF)

? 100 Avalanche Tested

? This Device is Pb?Free and is RoHS Compliant

Applications

? Solar Inverter

? AC?DC Power Supply