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DG2612

Low-Voltage,LowrON,SPDTAudioSwitchwithNegativeSwingCapability

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG2612

Low-Voltage,LowRON,SPDTAudioSwitchwithNegativeSwingCapability

FEATURES ?Lowvoltageoperation(1.8Vto5.5V) ?Lowon-resistance-RON:1.0Ωat2.7V ?Highbandwidth BENEFITS ?Negativesignalswingcapability ?Shuntswitchtoeliminateswitchingnoise ?SimplifieddesignwithdirectDCcoupling ?SpacesavingSC-89package APPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

EC2612

40GHzSuperLowNoisePHEMT

Description TheEC2612isbasedona0.15μmgatepseudomorphichighelectronmobilitytransistor(0.15μmPHEMT)technology.Gatewidthis120μmandthe0.15μmT-shapedaluminiumgatefeatureslowresistanceandexcellentreliability.Thedeviceshowsaveryhightransconductancewhichleadsto

UMS

United Monolithic Semiconductors

EC2612

40GHzSuperLowNoisepHEMT

UMS

United Monolithic Semiconductors

EDAB2612

EDAB2xxx-Series

ProductDescription BasesforE-SerieCabinetswithknockoutsforcableentry.Thebaseisconstructedoutoftwosideprofileswhichcorrespondtothedepthofthecabinet,andtwocoverpanels(frontandback)withacorrespondingwidth..

BELDENBelden Inc.

百通電纜設(shè)計(jì)科技有限公司

FDC2612

200VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features ?1.1

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDC2612

N-ChannelMOSFET200V,1.5A,0.7

Features Vbs=200V b=1.5A Roson)

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

FDD2612

200VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features ?4.9A,2

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD2612

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.9A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=720mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDD2612

N-channelEnhancementModePowerMOSFET

Features ?VDS=200V,ID=8A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    2612G

  • 制造商:

    MICRO-ELECTRONICS

  • 制造商全稱:

    Micro Electronics

  • 功能描述:

    LED BACKLIGHT FOR LCD DISPLAY

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Abbatron/HHSmith
5
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50
全新原裝鄙視假貨15118075546
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進(jìn)口原裝,優(yōu)勢(shì)現(xiàn)貨
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WAGO
23+
AN
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專注配單,只做原裝進(jìn)口現(xiàn)貨
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WAGO
23+
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2年內(nèi)
NA
15000
英博爾原裝優(yōu)質(zhì)現(xiàn)貨訂貨渠道商
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更多2612G供應(yīng)商 更新時(shí)間2025-4-5 16:06:00