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2N3713

isc Silicon NPN Power Transistor

DESCRIPTION ?ExcellentSafeOperatingArea ?LowCollector-EmitterSaturationVoltage ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation. APPLICATIONS ?Designedformedium-speedswitchingandamplifierapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2N3713

EPITAXIAL-BASE NPN - PNP

EPITAXIAL-BASENPN-PNP The2N3713,2N3714,2N3715and2N3716aresiliconepitaxial-baseNPNpowertransistorinJedecTO-3metalcase.Theyareintededforuseinpowerlinearandswitchingapplications.ThecomplementaryPNPtypesare2N3789,2N3790,2N3791and2N3792respectively.

COMSET

Comset Semiconductor

2N3714

SILICON NPN POWER TRANSISTORS

SILICONNPNPOWERTRANSISTORS 10AMPEREPOWERTRANSISTORSNPNSILICON60-80VOLTS150WATTS

bocaBoca Semiconductor Corporation

博卡博卡半導(dǎo)體公司

2N3714

Power Transistors

PowerTransistors

ETCList of Unclassifed Manufacturers

未分類制造商

2N3714

Bipolar NPN Device in a Hermetically sealed TO3

BipolarNPNDeviceinaHermeticallysealedTO3MetalPackage. BipolarNPNDevice. VCEO=80V IC=10A

SEME-LAB

Seme LAB

2N3714

EPITAXIAL-BASE NPN - PNP

EPITAXIAL-BASENPN-PNP The2N3713,2N3714,2N3715and2N3716aresiliconepitaxial-baseNPNpowertransistorinJedecTO-3metalcase.Theyareintededforuseinpowerlinearandswitchingapplications.ThecomplementaryPNPtypesare2N3789,2N3790,2N3791and2N3792respectively.

COMSET

Comset Semiconductor

2N3714

SILICON NPN TRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N3713,2N3714,2N3715,and2N3716aresiliconNPNpowertransistorsmanufacturedbytheepitaxial-baseprocess,mountedinahermeticallysealedmetalpackagedesignedformediumspeedswitchingandamplifierapplications.

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

2N3714

isc Silicon NPN Power Transistor

DESCRIPTION ?ExcellentSafeOperatingArea ?LowCollector-EmitterSaturationVoltage ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation. APPLICATIONS ?Designedformedium-speedswitchingandamplifierapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2N3714SMD

Bipolar NPN Device in a Hermetically sealed

BipolarNPNDeviceinaHermeticallysealedCeramicSurfaceMountPackageforHighReliabilityApplications BipolarNPNDevice. VCEO=80V IC=10A

SEME-LAB

Seme LAB

2N3715

10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS

SiliconNPNPowerTransistors ...designedformedium–speedswitchingandamplifierapplications.Thesedevicesfeature: ?TotalSwitchingTimeat3Atypically1.15μs ?GainRangesSpecifiedat1Aand3A ?LowVCE(sat):typically0.5VatIC=5AandIB=0.5A ?ExcellentSafeOperati

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

晶體管資料

  • 型號:

    2N371

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Ge-PNP

  • 性質(zhì):

    射頻/高頻放大 (HF)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    24V

  • 最大電流允許值:

    0.01A

  • 最大工作頻率:

    30MHZ

  • 引腳數(shù):

    4

  • 可代換的型號:

    AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,3AG54A,

  • 最大耗散功率:

    0.08W

  • 放大倍數(shù):

  • 圖片代號:

    C-36

  • vtest:

    24

  • htest:

    30000000

  • atest:

    0.01

  • wtest:

    0.08

詳細參數(shù)

  • 型號:

    2N371

  • 功能描述:

    兩極晶體管 - BJT NPN Gen Pur SS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價格
MOTOROLA
24+
CAN3
1000
原裝現(xiàn)貨假一罰十
詢價
N/A
24+/25+
20
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
24+
TO-3
10000
全新
詢價
MOT
24+
CAN3
4326
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
詢價
MOT
24+
TO-3
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價
BOCA
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
SSI
24+
TO
2342
進口原裝正品優(yōu)勢供應(yīng)
詢價
ANY
68
全新原裝 貨期兩周
詢價
MICROSEMI
24+
SMD
1680
MICROSEMI專營品牌進口原裝現(xiàn)貨假一賠十
詢價
CNTR
25+23+
TO3
47774
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
詢價
更多2N371供應(yīng)商 更新時間2025-4-6 8:00:00