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2N5190G_ONSEMI/安森美半導體_兩極晶體管 - BJT BIP NPN 4A 40V宏捷佳二部
- 詳細信息
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產(chǎn)品屬性
- 類型
描述
- 型號:
2N5190G
- 功能描述:
兩極晶體管 - BJT BIP NPN 4A 40V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
PNP 集電極—基極電壓
- VCBO:
集電極—發(fā)射極最大電壓
- VCEO:
- 40 V 發(fā)射極 - 基極電壓
- VEBO:
- 6 V
- 增益帶寬產(chǎn)品fT:
直流集電極/Base Gain hfe
- Min:
100 A
- 安裝風格:
SMD/SMT
- 封裝/箱體:
PowerFLAT 2 x 2
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