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2N6764

N-CHANNEL ENHANCEMENT-MODE

The2N6763and2N6764aren-channelenhancement-modesilicon-gatepowerMOSfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriver;:,anddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgate

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2N6764T1

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543

DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N6765

N-Channel Power MOSFETs, 30A, 150V/200V

N-ChannelPowerMOSFETs,30A,150V/200V PowerAndDiscreteDivision

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N6765

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

2N6765

VGS Rated at ?20V

DESCRIPTION ?VGSRatedat±20V ?SiliconGateforfastswitchingspeeds ?IDSS、RDS(ON),specifiedatelevatedtemperature ?Lowdrivereqirements APPLICATIONS designedforhighpower,highspeedapplication,suchasswitchingapplies,UPS,ACandDCmotorcontrols,relayandhighener

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2N6765

N-Channel Power MOSFETs 30 A,150 V/200 V

N-ChannelPowerMOSFETs,30A,150V/200V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2N6766

N-Channel Power MOSFETs, 30A, 150V/200V

N-ChannelPowerMOSFETs,30A,150V/200V PowerAndDiscreteDivision

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N6766

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

2N6766

N-CHANNEL MOSFET

DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N6766

N-CHANNEL MOSFET

DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto

MicrosemiMicrosemi Corporation

美高森美美高森美公司

晶體管資料

  • 型號:

    2N6702

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    開關(guān)管 (S)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    140V

  • 最大電流允許值:

    7A

  • 最大工作頻率:

    >50MHZ

  • 引腳數(shù):

    3

  • 可代換的型號:

    BU409,BUW64A,BUW64B,BUW64C,TIP150,TIP151,TIP152,3DK206C,

  • 最大耗散功率:

    50W

  • 放大倍數(shù):

  • 圖片代號:

    B-10

  • vtest:

    140

  • htest:

    50000100

  • atest:

    7

  • wtest:

    50

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
TO-220
10000
全新
詢價
ST
22+
TO-220
6000
十年配單,只做原裝
詢價
ST/意法
23+
13
900010
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
詢價
ST
23+
TO-220
16900
正規(guī)渠道,只有原裝!
詢價
ST
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
ST
25+
TO-TO-220
37650
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
ST
21+
TO-220
23480
詢價
ONSEMI/安森美
24+
TO-220
60000
全新原裝現(xiàn)貨
詢價
ST
25+
TO-220
18000
全新原裝
詢價
RCA
13
全新原裝 貨期兩周
詢價
更多2N67供應(yīng)商 更新時間2025-4-23 16:00:00