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2N7002BKW_V01

60 V, 310 mA N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT323(SC-70)Surface- MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnology ?ESD

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

2N7002-CAR

Marking：7002；Package：SOT-23；N-Channel Enhancement Mode Field Effect

TransistorFeatures ?HighdensitycelldesignforlowRDS(ON)?Voltagecontrolledsmallsignalswitching?Highsaturationcurrentcapability?Highspeedswitching?-CARforautomotiveandotherapplicationsrequiringuniquesiteandcontrolchangerequirements;AEC-Q101qualifiedandPPAPcapable

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

2N7002CK

Marking：LP-；Package：SOT-23；60 V, 0.3 A N-channel Trench MOSFET

Generaldescription ESDprotectedN-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Features ●Logic-levelcompatible ●Veryfastswitching ●TrenchMOSFETtechnology ●ESDprotect

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

2N7002D3

N-Channel Enhancement MOSFET

Features ?VDS=60V,ID=0.32A ?RDS(ON)=1.6Ω@VGS=10V(Typ.) ?RDS(ON)=2.0Ω@VGS=4.5V(Typ.) ?HighPowerandcurrenthandingcapability ?Leadfreeproductisacquired ?SurfaceMountPackage MainApplications ?BatteryProtection ?LoadSwitch ?PowerManagement

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

2N7002DS6

Marking：702；Package：SOT-363；Double N-CHANNEL MOSFET in a SOT-363 Plastic Package.

Features SensitivegatetriggercurrentandLowHoldingcurrent.ESDprotecteddiode. ESDrating:2200VHBM Halogen-free

RECTRON

Rectron Semiconductor

2N7002DW

Marking：702；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET

DUALN-CHANNELENHANCEMENTMODEMOSFETS Thisspace-efficientdevicecontainstwoelectrically-isolatedN-Channelenhancement-modeMOSFETs.ItcomesinaverysmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●LowOn-Re

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002DW

Marking：K72；Package：SOT-363；Plastic-Encapsulate MOSFETs

DualN-channelMOSFET FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

2N7002DW

Small Signal MOSFET

SmallSignalMOSFET115mAmps,60Volts N–ChannelSOT–363

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2N7002DW

Plastic-Encapsulated Transistors

MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

2N7002DW

300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC2N7002DWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON) *VoltageControlledSmallSign

UTCUnisonic Technologies

友順友順科技股份有限公司

詳細參數(shù)

  • 型號：

    2N700

  • 功能描述：

    MOSFET N-Chan Enhancement Mode Field Effect

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
24+
SOT-523
45000
熱賣優(yōu)勢現(xiàn)貨
 詢價
CJ/長晶
23+
SOT523
90000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
SALLTECH
20+
6000
英瑞芯現(xiàn)貨庫存
 詢價
FAIRCHILD/仙童
2020+PB
SOT-523
3650
原裝正品 可含稅交易
 詢價
CJ/長電
2021+
SOT-523
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
CJ/長電
25+
SOT523
157297
明嘉萊只做原裝正品現(xiàn)貨
 詢價
ONSEMI
24+
N/A
10000
只做原裝,實單最低價支持
 詢價
Slkor/薩科微
24+
SOT-523-3
50000
Slkor/薩科微一級代理,價格優(yōu)勢
 詢價
FAIRCHILD
13+
19258
原裝分銷
 詢價
NXP恩智浦/PHILIPS飛利浦
24+
SOT-23
366000
新進庫存/原裝
 詢價
更多2N700供應商 更新時間2025-4-24 17:37:00

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