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2N7002KW

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002KW

N-ChSmallSignalMOSFETwithESDProtection

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2N7002KW

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

YANGJIEYangzhou yangjie electronic co., ltd

揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司

2N7002KW

N-ChannelEnhancementModeFieldEffectTransistor

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?PbFree/RoHSCompliant ?ESDHBM=1000VasperJESD22A114andESDCDM=1500VasperJESD22C101

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N7002KW

N-Channel60-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowOn-Resistance:2Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?1200VESDProtection ?ComplianttoRoHSDirective20

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

2N7002KW

N-ChannelEnhancementMOSFET

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●ESDProtected2KVHBM

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

2N7002KW

N-ChannelSMDMOSFETESDProtection

Features ?RDS(ON)=3.0Ω,VGS=10V,@60V/0.50A ?RDS(ON)=4.0Ω,VGS=4.5V,@60V/0.20A ?ESDproduction2kV(Humanbodymode) ?Advancedtrenchprocesstechnology. ?Highdensitycelldesignforultralowon-resistance. ?Speciallydesignedforbatteryoperatedsystem, solid-staterelaysdr

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

2N7002KW

N-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7002KWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgatevoltagesduringoperation.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *LowReverseTransferCapacitance *ESDProtected *FastSwitchingCap

UTCUnisonic Technologies

友順友順科技股份有限公司

2N7002KW

N-ChannelMOSFET

N-ChannelMOSFET FEATURE ●HighdensitycelldesignforLowRDS(on) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

2N7002KW

N-ChannelEnhancementModeFieldEffectTransistor

Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?LowInput/OutputLeakage ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponreques

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    2N7002KG

  • 制造商：

    SECOS

  • 制造商全稱：

    SeCoS Halbleitertechnologie GmbH

  • 功能描述：

    N-Ch Small Signal MOSFET with Gate Protection

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銀河微電子
2447
SOT-23
105000
3000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
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UTC/友順
23+
SOT23
50000
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UTC
19+
SOT23
354000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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UTC/友順
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SOT23
10730
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LISION
22+
SOT23
30000
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UTC/友順
2023+
SOT23
11000
AI智能識(shí)別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
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UTC/友順
24+
NA/
354000
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24+
N/A
56000
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UTC/友順
25+
SOT-23-3
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UTC
20+
SOT23
360000
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更多2N7002KG供應(yīng)商 更新時(shí)間2025-4-24 15:00:00

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