零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
2SA812 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR(PNP) FEATURES ?Complementaryto2SC1623 ?HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) ?HighVoltage:Vceo=-50V | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | |
2SA812 | Plastic-Encapsulate Transistors Features: 1.hFEishigh,hFE=200(TYP)VCE=-6V,IC=-1mA; 2.Highvoltage,VCEO=-50V; Applications: Forgeneralamplification,itiscomplementaryto2SC1623. | SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD. 三聯(lián)盛科技股份深圳市三聯(lián)盛科技股份有限公司 | SHENZHENSLS | |
2SA812 | Plastic-Encapsulate Transistors FEATURES Complementaryto2SC1623 HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) HighVoltage:Vceo=-50V | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰電子有限公司 | HOTTECH | |
2SA812 | Silicon PNP transistor in a SOT-23 Plastic Package Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features Complementarypairwith2SC1623. Applications Audiofrequencyamplifierapplication. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍箭電子佛山市藍箭電子股份有限公司 | FOSHAN | |
2SA812 | Marking:M4;Package:SOT-23;PNP Silicon Epitaxial Transistor Features ●HighDCCurrentGain:hFE=200TYP.(VCE=-6.0V,IC=-1.0mA) ●HighVoltage:VCEO=-50V | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風微電子廣東佑風微電子有限公司 | YFWDIODE | |
2SA812 | Marking:HFE;SILICON TRANSISTOR PNPSILICONEPITAXIALTRANSISTOR MINIMOLD FEATURES ?Complementaryto2SC1623 ?HighDCCurrentGain:hFE=200TYP.(VCE=?6.0V,IC=?1.0mA) ?HighVoltage:VCEO=?50V ABSOLUTEMAXIMUMRATINGS(TA=25°C) CollectortoBaseVoltageVCBO?60V CollectortoEmitterVoltageVCEO?50 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
2SA812 | Plastic-Encap sulate Transistors FEATURES Complementaryto2SC1623 HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) HighVoltage:Vceo=-50V | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | |
2SA812 | Marking:M4/M5/M6/M7;Package:SOT-23;Silicon Epitaxial Planar Transistor FEATURES ●Commplementaryto2SC1623. ●HighDCcurrentgain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ●HighVoltage:VCEO=-50V. APPLICATIONS ●Audiofrequency,generalpurposeamplifier. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司 | LUGUANG | |
2SA812 | Marking:M6;Package:SOT-23;Silicon Epitaxial Planar Transistor FEATURES ?Commplementaryto2SC1623. ?HighDCcurrentgain:hFE=200typ.(VCE=-6.0V,IC=-1.0mA) ?HighVoltage:VCEO=-50V. APPLICATIONS ?Audiofrequency,generalpurposeamplifier. | SKTECHNOLGYSHIKE Electronics 時科廣東時科微實業(yè)有限公司 | SKTECHNOLGY | |
2SA812 | PNP Plastic-Encapsulate Transistors | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒濟南晶恒電子有限責任公司 | JINGHENG |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-PNP
- 性質(zhì):
表面帖裝型 (SMD)_通用型 (Uni)
- 封裝形式:
貼片封裝
- 極限工作電壓:
60V
- 最大電流允許值:
0.1A
- 最大工作頻率:
180MHZ
- 引腳數(shù):
3
- 可代換的型號:
BC856,BCW68,BCW89,BCX17,2SA1311,3CG110C,
- 最大耗散功率:
0.2W
- 放大倍數(shù):
- 圖片代號:
H-15
- vtest:
60
- htest:
180000000
- atest:
0.1
- wtest:
0.2
詳細參數(shù)
- 型號:
2SA812
- 制造商:
Panasonic Industrial Company
- 功能描述:
TRANSISTOR
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
2015+ |
4000 |
公司現(xiàn)貨庫存 |
詢價 | ||||
2015+ |
4000 |
公司現(xiàn)貨庫存 |
詢價 | ||||
LRC/藍箭 |
SOT23 |
1000000 |
2012 |
詢價 | |||
NEC |
14+無鉛 |
SOT-23 |
25700 |
優(yōu)勢產(chǎn)品,博盛微熱賣!!! |
詢價 | ||
長電/長晶 |
23+ |
SOT-23 |
120000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
RENESAS/瑞薩 |
20+ |
SOT-23 |
120000 |
原裝正品 可含稅交易 |
詢價 | ||
CJ/長電 |
2021+ |
SOT-23 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
CJ/長晶 |
24+ |
SOT-23 |
30000 |
長晶全系列二三極管原裝優(yōu)勢供應,歡迎詢價 |
詢價 | ||
長電 |
2024 |
SOT-23 |
8230 |
16余年資質(zhì) 絕對原盒原盤代理渠道 更多數(shù)量 |
詢價 | ||
NEC |
24+ |
SOT23 |
18000 |
原裝現(xiàn)貨假一罰十 |
詢價 |