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2SB1182

Mediumpowertransistor(-32V,-2A)

●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M. ●Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

MediumpowerTransistor(32V,2A)

Features 1)LowVCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M.

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

TO-252-2L(4R)Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES PowerDissipation

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

2SB1182

Mediumpowertransistor(32V,2A)

Mediumpowertransistor(?32V,?2A) Features 1)LowVCE(sat). VCE(sat)=?0.5V(Typ.) (IC/IB=?2A/?0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862 Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

Mediumpowertransistor(32V,2A)

Features 1)LowVCE(sat). VCE(sat)=?0.5V(Typ.) (IC/IB=?2A/?0.2A) 2)Complements2SD1758/2SD1862.

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

MEDIUMPOWERLOWVOLTAGETRANSISTOR

DESCRIPTION TheUTC2SB1182isamediumpowerlowvoltagetransistor,designedforaudiopoweramplifier,DC-DCconverterandvoltageregulator. FEATURES *Highcurrentoutputupto3A *Lowsaturationvoltage

UTCUnisonic Technologies

友順友順科技股份有限公司

2SB1182

MediumPowerTransistor

FEATURES ●LowVCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) ●Complementsthe2SD1758 APPLICATIONS ●Epitaxialplanartype. ●PNPsilicontransistor.

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

2SB1182

Mediumpowertransistor(32V,2A)

Mediumpowertransistor(?32V,?2A) Features 1)LowVCE(sat). VCE(sat)=?0.5V(Typ.) (IC/IB=?2A/?0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862 Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

iscSiliconPNPPowerTransistor

DESCRIPTION ?Smallandslimpackage ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Powerdissipation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SB1182

Mediumpowertransistor(-32V,-2A)

●Features 1)LowVCE(sat). VCE(sat)=?0.5V(Typ.) (IC/IB=?2A/?0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862. ●Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

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更多2SB1182TLQ-CUTTAPE供應(yīng)商 更新時(shí)間2025-5-24 16:30:00

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