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2SC3070

High-hFE, Low-Frequency General-Purpose Amp Applications????

HighhFE,Low-FrequencyGeneral-PurposeAmplifierApplications Features ?HighDCcurrentgain(hFE=800to3200). ?Largecurrentcapacity(IC=1.2A). ?Lowcollector-to-emittersaturationvoltage (VCE(sat)=0.5Vmax). ?HighVEBO(VEBO≥15V). Applications ?Low-frequency,general-purp

SANYOSanyo Semicon Device

三洋三洋電機株式會社

2SC3071

High-hFE, Low-Frequency General-Purpose Amp Applications????

HighhFE,Low-FrequencyGeneral-PurposeAmplifierApplications Features ·HighDCcurrentgain(hFE=500to2000). ·Highbreakdownvoltage(VCEO≥100V). ·Lowcollector-to-emittersaturationvoltage(VCE(sat)≤0.5V). ·HighVEBO(VEBO≥15V). Applications ·Low-frequency,general-p

SANYOSanyo Semicon Device

三洋三洋電機株式會社

2SC3072

TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications ?HighDCcurrentgain :hFE=140to450(VCE=2V,IC=0.5A) :hFE=70(min)(VCE=2V,IC=4A) ?Lowcollectorsaturationvoltage :VCE(sat)=1.0V(max)(IC=4A,IB=0.1A) ?Highpowerdi

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC3072

Silicon NPN Epitaxial

Features ?HighDCcurrentgain. ?Lowcollectorsaturationvoltage. ?Highpowerdissipation.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SC3072

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC3072

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=20V(Min) ·DCCurrentGain- :hFE=140(Min)@IC=0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SC3072

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=20V(Min) ·DCCurrentGain- :hFE=140(Min)@IC=0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SC3072-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=20V(Min) ·DCCurrentGain- :hFE=140(Min)@IC=0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SC3072-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=20V(Min) ·DCCurrentGain- :hFE=140(Min)@IC=0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SC3073

SILICON NPN EPITAXIAL TYPE(PCT PROCESS)

POWERAMPLIFIERAPPLICATIONS. CARRADIO,CARSTEREOOUTPUTSTAGEAMPLIFIERAPPLICATIONS. FEATURES: ?GoodLinearityofhFE ?Complementaryto2SA1243

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

晶體管資料

  • 型號：

    2SC3071

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產廠家：

  • 制作材料：

    Si-NPN

  • 性質：

    HI_UEB_HI_BETA

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    120V

  • 最大電流允許值：

    0.2A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數：

    3

  • 可代換的型號：

    2SD1211,

  • 最大耗散功率：

  • 放大倍數：

    β>500

  • 圖片代號：

    A-20

  • vtest：

    120

  • htest：

    999900

  • atest：

    0.2

  • wtest：

    0

供應商型號品牌批號封裝庫存備注價格
SANYO
24+
TO-92L
530
詢價
三洋
2020+
TO-92
11160
百分百原裝正品 真實公司現貨庫存 本公司只做原裝 可
 詢價
UTG
24+
SOT-89
5000
全現原裝公司現貨
 詢價
TOS
23+
TO
20000
正品原裝貨價格低
 詢價
SNAYO
23+
TO-92
6500
專注配單,只做原裝進口現貨
 詢價
SNAYO
23+
TO-92
6500
專注配單,只做原裝進口現貨
 詢價
SNAYO
21+
TO-92
5580
原裝現貨假一賠十
 詢價
三年內
1983
只做原裝正品
 詢價
24+
N/A
64000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
東芝
12+
TO-252
15000
全新原裝,絕對正品,公司現貨供應。
 詢價
更多2SC307供應商 更新時間2025-4-25 16:30:00

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