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2SC5633

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5633isasuperminipackageresinsealedsiliconNPNepitaxialtransistor, Itisdesignedforhighvoltageapplication. FEATURE ●Smallcollectortoemittersaturationvoltage.VCE(sat)=0.5Vmax ●Superminipackageforeasymounting APPLICATION ForHybridIC,DC-DCconv

ISAHAYAIsahaya Electronics Corporation

諫早電子諫早電子株式會社

2SC5634

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION Mitsubishi2SC5634isasuperminipackageresinsealedsiliconNPNepitaxialtransistor.Itisdesignedforhighfrequencyapplication. FEATURE ?Highgainbandwidthproduct.fT=8.0GHz ?Highgain,lownoise. ?Canoperateatlowvoltage. ?Superminipackageforeasymounting. A

ISAHAYAIsahaya Electronics Corporation

諫早電子諫早電子株式會社

2SC5635

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION Mitsubishi2SC5635isasuperminipackageresinsealedsiliconNPNepitaxialtransistor.Itisdesignedforhighfrequencyapplication. FEATURE ?Superminipackageforeasymounting. ?Highgainbandwidthproduct. fT=8.0GHz ?Highgain,lownoise. ?Canoperateatlowvoltage

ISAHAYAIsahaya Electronics Corporation

諫早電子諫早電子株式會社

2SC5636

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION Mitsubishi2SC5636isasuperminipackageresinsealedsiliconNPNepitaxialtransistor.Itisdesignedforhighfrequencyapplication. FEATURE ?Highgainbandwidthproduct.fT=8.0GHz ?Highgain,lownoise. ?Canoperateatlowvoltage. ?Superminipackageforeasymounting. A

ISAHAYAIsahaya Electronics Corporation

諫早電子諫早電子株式會社

2SC5637

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features ?Highspeed(tf=100nstyp). ?Highbreakdownvoltage(VCBO=1500V). ?Highreliability(AdoptionofHVPprocess). ?AdoptionofMBITprocess.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

2SC5638

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features ?Highspeed(tf=100nstyp). ?Highbreakdownvoltage(VCBO=1500V). ?Highreliability(AdoptionofHVPprocess). ?AdoptionofMBITprocess.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

2SC5639

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features ·Highspeed(tf=100nstyp). ·Highbreakdownvoltage(VCBO=1500V). ·Highreliability(AdoptionofHVPprocess). ·AdoptionofMBITprocess.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

2SC5645

UHF to S Band Low-Noise Amplifier and OSC Applications

UHFtoSBandLow-NoiseAmplifierandOSCApplications Features ?Lownoise:NF=1.5dBtyp(f=2GHz). ?Highcutofffrequency:fT=10GHztyp(VCE=1V). :fT=12.5GHztyp(VCE=3V). ?Low-voltageoperating. ?Highgain:?|S21e|2=9.5dBtyp(f=2GHz).

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

2SC5646

UHF to S Band Low-Noise Amplifier andOSC Applications

UHFtoSBandLow-NoiseAmplifierandOSCApplications Features ?Low-noiseuse:NF=1.5dBtyp(f=2GHz). ?Highcut-offfrequency:fT=10GHztyp(VCE=1V). :fT=12.5GHztyp(VCE=3V). ?Lowoperatingvoltage. ?Highgain:?S21e?2=9.5dBtyp(f=2GHz

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

2SC5646A

UHF to S-Band Low-Noise Amplifier, OSC Applications

UHFtoS-BandLow-NoiseAmplifier,OSCApplications Features ?Low-noise:NF=1.5dBtyp(f=2GHz) ?Highcut-offfrequency:fT=10GHztyp(VCE=1V) :fT=12.5GHztyp(VCE=3V) ?Low-voltageoperation ?Highgain:?S21e?2=9.5dBtyp(f=2GHz) ?Ultrasmall,sl

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

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NEC
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00+
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NEC
24+
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更多2SC56供應(yīng)商 更新時(shí)間2023-6-8 12:14:00