2SC5720

MEDIUM POWER AMPLIFIER APPLICATIONS

MEDIUMPOWERAMPLIFIERAPPLICATIONS STOROBOFLASHAPPLICATIONS LowSaturationVoltage:VCE(sat)(1)=0.25V(max)(IC=3A/IB=60mA)

2SC5722

NPN PLANAR SILICON TRANSISTOR

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features ?Highspeed. ?Highbreakdownvoltage(VCBO=1500V). ?Highreliability(AdoptionofHVPprocess). ?AdoptionofMBITprocess.

2SC5725

Silicon NPN epitaxial planar type

SiliconNPNepitaxialplanartype ForDC-DCconverter ■Features ?Lowcollector-emittersaturationvoltageVCE(sat) ?Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking

2SC5727

SMALL-SIGNAL TRANSISTOR FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC5727isasuperminipackageresinsealedsiliconNPNepitaxialtransistor. Itisdesignedforhighfrequencyapplication. FEATURE ●Highgainbandwidthproduct. fT=10.0GHz ●Highgain,lownoise. ●Canoperateatlowvoltage. ●Superminipackageforeasymounting APPLI

2SC5728

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5728isaultrasuperminipackageresinsealedsiliconNPNepitaxialtransistor. Itisdesignedforhighfrequencyapplication. FEATURE ●Highgainbandwidthproduct. fT=10.0GHz ●Highgain,lownoise. ●Canoperateatlowvoltage. ●Superminipackagefore

2SC5729

MEDIUM POWER TRANSISTOR (-30V,-0.5A)

Features 1)Highspeedswitching.(Tf:Typ.:40nsatIC=?500mA) 2)Lowsaturationvoltage,typically(Typ.:?150mVatIC=?100A,IB=?100mA) 3)Strongdischargepowerforinductiveloadandcapacitanceload. 4)Complementsthe2SC5729 Applications Smallsignallowfrequencyamplif

2SC5726

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

2SC5729

Medium power transistor (30V, 0.5A)

2SC57250SL

Package：TO-236-3，SC-59，SOT-23-3；包裝：散裝 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 15V 2A MINI3

2SC5729T106Q

Package：SC-70，SOT-323；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 30V 0.5A UMT3

Rohm Semiconductor