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2SC5810

TOSHIBA Transistor Silicon NPN Epitaxial Type

High-SpeedSwitchingApplications DC-DCConverterApplications StrobeApplications ?HighDCcurrentgain:hFE=400to1000(IC=0.1A) ?Lowcollector-emittersaturationvoltage:VCE(sat)=0.17V(max) ?High-speedswitching:tf=85ns(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SC5810

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SC5811

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Feature high-voltage:VCBO=1600V. ?Highreliability(HVPprocessadopted).·MBITprocessadopted.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

2SC5812

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features ?Highpowergain,Lownoisefigureatlowpoweroperation: |S21|2=17dBtyp,NF=1.0dBtyp(VCE=1V,IC=5mA,f=900MHz)

HitachiHitachi Semiconductor

日立日立公司

2SC5812

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Application ?Highpowergain,Lownoisefigureatlowpoweroperation: |S21|2=17dBtyp,NF=1.0dBtyp(VCE=1V,IC=5mA,f=900MHz)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5812WG-TR-E

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Application ?Highpowergain,Lownoisefigureatlowpoweroperation: |S21|2=17dBtyp,NF=1.0dBtyp(VCE=1V,IC=5mA,f=900MHz)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5813

Silicon NPN epitaxial planar type

SiliconNPNepitaxialplanartype ForDC-DCconverter ■Features ?Lowcollector-emittersaturationvoltageVCE(sat) ?Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking

PanasonicPanasonic Semiconductor

松下松下電器

2SC5814

For Low Frequency Amplify Application Silicon NPN Epitaxial Type

DESCRIPTION 2SC5814，2SC5815，2SC5816，2SC5817isasuperminipackagesiliconNPNepitaxialtypetransistor.Itisdesignedforlowfrequencyvoltageamplifyapplication. FEATURE ●Facilitatesminiaturizationandhigh-densitymounting ●ExcellentlinearityofDCforwardcurrentgain ●Lowcolle

ISAHAYAIsahaya Electronics Corporation

諫早電子諫早電子株式會(huì)社

2SC5815

Marking：EE；Package：SOT-323；For Low Frequency Amplify Application Silicon NPN Epitaxial Type

DESCRIPTION 2SC5814，2SC5815，2SC5816，2SC5817isasuperminipackagesiliconNPNepitaxialtypetransistor.Itisdesignedforlowfrequencyvoltageamplifyapplication. FEATURE ●Facilitatesminiaturizationandhigh-densitymounting ●ExcellentlinearityofDCforwardcurrentgain ●Lowcolle

ISAHAYAIsahaya Electronics Corporation

諫早電子諫早電子株式會(huì)社

2SC5816

For Low Frequency Amplify Application Silicon NPN Epitaxial Type

DESCRIPTION 2SC5814，2SC5815，2SC5816，2SC5817isasuperminipackagesiliconNPNepitaxialtypetransistor.Itisdesignedforlowfrequencyvoltageamplifyapplication. FEATURE ●Facilitatesminiaturizationandhigh-densitymounting ●ExcellentlinearityofDCforwardcurrentgain ●Lowcolle

ISAHAYAIsahaya Electronics Corporation

諫早電子諫早電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    2SC581

  • 功能描述：

    MOSFET Power Trans 100V 0.17V Vce 85ns

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TOSHIBA/東芝
2019+
SOT89
36000
原盒原包裝 可BOM配套
 詢價(jià)
TOSHIBA
24+
SOT-89
8200
新進(jìn)庫(kù)存/原裝
 詢價(jià)
TOSHIBA
17+
SOT-89
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
TOSHIBA
23+
SOT-89
60000
原裝正品,假一罰十
 詢價(jià)
TOSHIBA
23+
SOT89
12000
全新原裝優(yōu)勢(shì)
 詢價(jià)
TOSHIBA
2020+
SOT-89
3000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
toshiba
24+
BGA
1068
原裝現(xiàn)貨假一罰十
 詢價(jià)
TOSHIBA
24+
SOT89
2987
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電
 詢價(jià)
TOSHIBA
23+
SOT89
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
SOT-89
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價(jià)
更多2SC581供應(yīng)商 更新時(shí)間2025-4-3 10:20:00

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