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2SD1480

Silicon NPN triple diffusion planar type(For power amplification)

SiliconNPNtriplediffusionplanartype Forpoweramplification Complementaryto2SB1052 ■Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●LowcollectortoemittersaturationvoltageVCE(sat) ●Full-packpackagewhichcanbeinstalledtotheheatsinkw

PanasonicPanasonic Semiconductor

松下松下電器

2SD1480

isc Silicon NPN Power Transistor

DESCRIPTION ?LowCollectorSaturationVoltage :VCE(sat)=2.0V(Max)@IC=2A ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=60V(Min) ?GoodLinearityofhFE ?ComplementtoType2SB1052 APPLICATIONS ?Designedforpoweramplifierapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SD1481

SILICON POWER TRANSISTOR

NPNSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION) FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING FEATURES ?On-chipC-to-BZenerdiodeforsurgevoltageabsorption ?Lowcollectorsaturationvoltage:VCE(SAT)=1.5VMAX.(at1A) ?IdealforuseinadirectdrivefromICt

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SD1481

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ?On-chipC-to-BZenerdiodeforsurgevoltageabsorption ?LowCollector-EmitterSaturationVoltage- :VCE(sat)=1.5V(Max)@IC=1A ?HighDCCurrentGain :hFE=2000(Min)@IC=1A ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceand

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SD1481

SILICON POWER TRANSISTOR

NPNSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION) FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING FEATURES ?On-chipC-to-BZenerdiodeforsurgevoltageabsorption ?Lowcollectorsaturationvoltage:VCE(SAT)=1.5VMAX.(at1A) ?IdealforuseinadirectdrivefromIC

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SD1484K

Marking：YR；Package：SOT-323；Medium Power Transistor (50V, 0.5A)

Features 1)Highcurrent.(IC=0.5A) 2)Lowsaturationvoltage,typicallyVCE(sat)=0.1VatIC/IB=150mA/15mA.

ROHMRohm

羅姆羅姆半導體集團

2SD1484K

Medium Power Transistor

Features ●Highcurrent.(IC=5A). ●Lowsaturationvoltage,typicallyVCE(sat)=0.1VatIC/IB=150mA/15mA.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SD1484KT146R

Medium Power Transistor (50V,0.5A)

Features 1)Highcurrent.(IC=0.5A) 2)Lowsaturationvoltage,typicallyVCE(sat)=0.1VatIC/IB=150mA/15mA.

ROHMRohm

羅姆羅姆半導體集團

2SD1485

Silicon NPN triple diffusion planar type(For high power amplification)

SiliconNPNtriplediffusionplanartype ForhighpoweramplificationComplementaryto2SB1054 ■Features ●ExtremelysatisfactorylinearityoftheforwardcurrenttransferratiohFE ●Wideareaofsafeoperation(ASO) ●HightransitionfrequencyfT ●Full-packpackagewhichcan

PanasonicPanasonic Semiconductor

松下松下電器

2SD1485

isc Silicon NPN Power Transistor

SiliconNPNPowerTransistor DESCRIPTION ·LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=3A ·WideAreaofSafeOperation ·ComplementtoType2SB1054 APPLICATIONS ·Designedforhighpoweramplifierapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

晶體管資料

  • 型號：

    2SD1480

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-NPN

  • 性質：

    低頻或音頻放大 （LF）_開關管 （S）_功率放大 （L

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    60V

  • 最大電流允許值：

    2A

  • 最大工作頻率：

    20MHZ

  • 引腳數(shù)：

    3

  • 可代換的型號：

    BD936F,2SC3540,2SD1060,2SD1585,2SD1985,2SD2012,2SD2061,3DD157A,

  • 最大耗散功率：

    25W

  • 放大倍數(shù)：

  • 圖片代號：

    B-45

  • vtest：

    60

  • htest：

    20000000

  • atest：

    2

  • wtest：

    25

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MAT
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8529
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ISC
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HITACHI
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MAT
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TOSHIBA
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2800
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25000
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HITACHI
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NEC
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NEC
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更多2SD148供應商 更新時間2025-2-15 16:00:00

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