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2SJ461

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The2SJ461isaswitchingdevicewhichcanbedrivendirectlybya2.5Vpowersource. TheMOSFEThasexcellentswitchingcharacteristicandissuitableforuseasahigh-speedswitchingdeviceindigitalcircuits. FEATURES ?Canbedrivenbya2.5Vpowersource ?Notnecessary

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ461

MOS Field Effect Transistor

Features ●Canbedrivenbya2.5Vpowersource. ●Notnecessarytoconsiderdrivingcurrentbecauseofitshighinputimpedance. ●Possibletoreducethenumberofpartsbyomittingthebiasresistor.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ461

Marking：H19；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ461isaswitchingdevicewhichcanbedrivendirectly bya2.5Vpowersource. The2SJ461hasexcellentswitchingcharacteristicsandis suitableforuseasahigh-speedswitchingdeviceindigitalcircuit. FEATURES ?Canbedrivenbya2.5Vpowersource ?Notnecess

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ461A

MOS FIELD EFFECT TRANSISTOR

P-CHANNELMOSFET FORHIGHSPEEDSWITCHING DESCRIPTION The2SJ461Aisaswitchingdevicewhichcanbedrivendirectlybya2.5Vpowersource. The2SJ461Ahasexcellentswitchingcharacteristicsandissuitableforuseasahigh-speedswitchingdevicein digitalcircuit. FEATURES ?Canb

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ461A-T1B-A

P-Channel 60 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?High-SideSwitching ?LowOn-Resistance:3Ω ?LowThreshold:-2V(typ.) ?FastSwtichingSpeed:20ns(typ.) ?LowInputCapacitance:20pF(typ.) ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

2SJ461A-T1B-AT

Marking：H19；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

P-CHANNELMOSFET FORHIGHSPEEDSWITCHING DESCRIPTION The2SJ461Aisaswitchingdevicewhichcanbedrivendirectlybya2.5Vpowersource. The2SJ461Ahasexcellentswitchingcharacteristicsandissuitableforuseasahigh-speedswitchingdevicein digitalcircuit. FEATURES ?Canb

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ461A-T2B-AT

Marking：H19；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

P-CHANNELMOSFET FORHIGHSPEEDSWITCHING DESCRIPTION The2SJ461Aisaswitchingdevicewhichcanbedrivendirectlybya2.5Vpowersource. The2SJ461Ahasexcellentswitchingcharacteristicsandissuitableforuseasahigh-speedswitchingdevicein digitalcircuit. FEATURES ?Canb

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ461-T1B-A

P-Channel 60 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?High-SideSwitching ?LowOn-Resistance:3Ω ?LowThreshold:-2V(typ.) ?FastSwtichingSpeed:20ns(typ.) ?LowInputCapacitance:20pF(typ.) ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

2SJ461-T2B-A

P-Channel 60 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?High-SideSwitching ?LowOn-Resistance:3Ω ?LowThreshold:-2V(typ.) ?FastSwtichingSpeed:20ns(typ.) ?LowInputCapacitance:20pF(typ.) ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

2SJ461_15

P-Channel MOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

詳細(xì)參數(shù)

  • 型號：

    2SJ461

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS/瑞薩
20+
SOT-23
120000
原裝正品 可含稅交易
 詢價
NEC
23+
SOT23
8293
詢價
NEC
24+
SOT-23
366000
新進庫存/原裝
 詢價
NEC
23+
SOT-23
31000
全新原裝現(xiàn)貨
 詢價
NEC
24+
8858
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
NEC
24+
SOT-23
5000
只做原裝公司現(xiàn)貨
 詢價
KEXIN
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
NEC
19+
SOT23
59455
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
SOT-23
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
Renesas
19+
MMSC-59
200000
詢價
更多2SJ461供應(yīng)商 更新時間2025-3-30 14:00:00

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