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2SJ48

LOW FREQUENCY POWER AMPLIFIER

SILICONP-CHANNELMOSFET LOWFREQUENCYPOWERAMPLIFIER ComplementaryPairwith2SK133,2SK134,2SK135

HitachiHitachi Semiconductor

日立日立公司

2SJ483

Silicon P Channel MOS FET High Speed Power Switching

Features ?Lowon-resistance RDS(on)=0.08?typ(atVGS=–10V,ID=–2.5A) ?4Vgatedrivedevices. ?Largecurrentcapacitance ID=–5A

HitachiHitachi Semiconductor

日立日立公司

2SJ483

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.08?typ(atVGS=–10V,ID=–2.5A) ?4Vgatedrivedevices. ?Largecurrentcapacitance ID=–5A

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ483TZ-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.08?typ(atVGS=–10V,ID=–2.5A) ?4Vgatedrivedevices. ?Largecurrentcapacitance ID=–5A

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ484

Silicon P-Channel MOS FET High Speed Power Switching

Features ?Lowon-resistance RDS(on)=0.18?typ.(atVGS=–10V,ID=–1A) ?Lowdrivecurrent ?Highspeedswitching ?4Vgatedrivedevices.

HitachiHitachi Semiconductor

日立日立公司

2SJ484

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.18?typ.(atVGS=–10V,ID=–1A) ?Lowdrivecurrent ?Highspeedswitching ?4Vgatedrivedevices.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ484WYTL-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.18?typ.(atVGS=–10V,ID=–1A) ?Lowdrivecurrent ?Highspeedswitching ?4Vgatedrivedevices.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ484WYTR-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.18?typ.(atVGS=–10V,ID=–1A) ?Lowdrivecurrent ?Highspeedswitching ?4Vgatedrivedevices.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ485

Ultrahigh-Speed Switching Applications

Ultrahigh-SpeedSwitchingApplications Features ?LowONresistance. ?Ultrahigh-speedswitching. ?4Vdrive.

SANYOSanyo Semicon Device

三洋三洋電機株式會社

2SJ486

Silicon P Channel MOS FET Low FrequencyPower Switching

Features ?Lowon-resistance RDS(on)=0.5?typ.(atVGS=–4V,ID=–100mA) ?2.5Vgatedrivedevices. ?Smallpackage(MPAK).

HitachiHitachi Semiconductor

日立日立公司

詳細參數

  • 型號：

    2SJ48

  • 制造商：

    HITACHI

  • 制造商全稱：

    Hitachi Semiconductor

  • 功能描述：

    LOW FREQUENCY POWER AMPLIFIER

供應商型號品牌批號封裝庫存備注價格
24+
2000
詢價
HIT
24+
原廠封裝
2000
原裝現貨假一罰十
 詢價
HITACHI
2023+
TO-3
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
HITACHI/日立
24+
65230
詢價
HITACHI
23+
TO-3
5000
專注配單,只做原裝進口現貨
 詢價
HITACHI
2023+
TO-3
50000
原裝現貨
 詢價
HITACHI
23+
TO-3
5000
專注配單,只做原裝進口現貨
 詢價
RENESAS
05+
SOT223
1335
全新原裝進口自己庫存優(yōu)勢
 詢價
TOSHIBA
23+
TO251
7635
全新原裝優(yōu)勢
 詢價
RENESAS
23+
UPAK
10000
原裝正品,假一罰十
 詢價
更多2SJ48供應商 更新時間2025-2-22 16:00:00

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