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2SK170

Low Noise Audio Amplifier Applications

LowNoiseAudioAmplifierApplications ?RecommendedforfirststagesofEQandM.C.headamplifiers. ?High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) ?Highbreakdownvoltage:VGDS=?40V ?Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) ?High

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK170

Low Noise Audio Amplifier Applications

LowNoiseAudioAmplifierApplications ?RecommendedforfirststagesofEQandM.C.headamplifiers. ?High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) ?Highbreakdownvoltage:VGDS=?40V ?Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) ?High

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK170

Low Noise Audio Amplifier Applications

LowNoiseAudioAmplifierApplications ?RecommendedforfirststagesofEQandM.C.headamplifiers. ?High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) ?Highbreakdownvoltage:VGDS=?40V ?Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) ?High

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK170

FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)

LowNoiseAudioAmplifierApplications ?RecommendedforfirststagesofEQandM.C.headamplifiers. ?High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) ?Highbreakdownvoltage:VGDS=?40V ?Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) ?High

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK170-BL

Low Noise Audio Amplifier Applications

LowNoiseAudioAmplifierApplications ?RecommendedforfirststagesofEQandM.C.headamplifiers. ?High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) ?Highbreakdownvoltage:VGDS=?40V ?Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) ?High

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK170-GR

Low Noise Audio Amplifier Applications

LowNoiseAudioAmplifierApplications ?RecommendedforfirststagesofEQandM.C.headamplifiers. ?High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) ?Highbreakdownvoltage:VGDS=?40V ?Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) ?High

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK170-V

Low Noise Audio Amplifier Applications

LowNoiseAudioAmplifierApplications ?RecommendedforfirststagesofEQandM.C.headamplifiers. ?High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) ?Highbreakdownvoltage:VGDS=?40V ?Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) ?High

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK1711

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK1712

MOSFET

Sanken/MOSFET(2SK1177thru2SK3460)

SankenSanken electric

三墾三墾電氣株式會(huì)社

2SK1712

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    2SK17

  • 制造商:

    Panasonic Industrial Company

  • 功能描述:

    TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
TOS
13+
TO-92
128000
詢價(jià)
TOS
24+
原廠封裝
5500
原裝現(xiàn)貨假一罰十
詢價(jià)
24+
60000
詢價(jià)
TOS
2011+
TO-92
6000
絕對(duì)原裝自己現(xiàn)貨
詢價(jià)
TOSHIBA/東芝
24+
65230
詢價(jià)
TOSHIBA(東芝)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
詢價(jià)
TOSHIBA
23+
TO-92
3000
原裝正品假一罰百!可開增票!
詢價(jià)
國產(chǎn)
23+
TO-92
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
TOS
23+
TO-92
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
23+
to-92
36589
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
詢價(jià)
更多2SK17供應(yīng)商 更新時(shí)間2025-4-3 9:00:00