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2SK2826

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK2826isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?SuperLowOn-stateResistance RDS(on)1=6.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=9.7mΩMAX.(VGS=4.0

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2826

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK2826

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?SuperLowOn-StateResistance RDS(on)1=6.5m?(MAX.)(VGS=10V,ID=35A) RDS(on)2=9.7m?(MAX.)(VGS=4.0V,ID=35A) ?LowCiss:Ciss=7200p

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK2826-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK2826isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?SuperLowOn-stateResistance RDS(on)1=6.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=9.7mΩMAX.(VGS=4.0

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2826-S

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?SuperLowOn-StateResistance RDS(on)1=6.5m?(MAX.)(VGS=10V,ID=35A) RDS(on)2=9.7m?(MAX.)(VGS=4.0V,ID=35A) ?LowCiss:Ciss=7200p

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK2826-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK2826isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?SuperLowOn-stateResistance RDS(on)1=6.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=9.7mΩMAX.(VGS=4.0

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2826-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK2826isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?SuperLowOn-stateResistance RDS(on)1=6.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=9.7mΩMAX.(VGS=4.0

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2826-ZJ

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?SuperLowOn-StateResistance RDS(on)1=6.5m?(MAX.)(VGS=10V,ID=35A) RDS(on)2=9.7m?(MAX.)(VGS=4.0V,ID=35A) ?LowCiss:Ciss=7200p

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細參數(shù)

  • 型號：

    2SK2826-Z(AZ)

  • 制造商：

    Renesas Electronics Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
22+
SOT-263
20000
保證原裝正品,假一陪十
 詢價
N
23+
TO-263S
10000
公司只做原裝正品
 詢價
NEC
22+
SOT-263
100000
代理渠道/只做原裝/可含稅
 詢價
NEC
23+
SOT-263
4000
正品原裝貨價格低
 詢價
N
24+
TO-263S
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
NEC
24+
TO-263
36800
詢價
NEC
2023+環(huán)?，F(xiàn)貨
TO-263
18000
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價
FUJI
23+
TO-220
9516
詢價
富士通
TO-220
22+
6000
十年配單,只做原裝
 詢價
FUJITSU/富士通
23+
220
43000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
更多2SK2826-Z(AZ)供應(yīng)商 更新時間2025-2-14 12:29:00

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