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2SK3062-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3062-ZJ

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5m?MAX.(VGS=10V,ID=35A) RDS(on)2=12m?MAX.(VGS=4.0V,I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3062-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3062

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3062

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5m?MAX.(VGS=10V,ID=35A) RDS(on)2=12m?MAX.(VGS=4.0V,I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3062-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3062-S

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5m?MAX.(VGS=10V,ID=35A) RDS(on)2=12m?MAX.(VGS=4.0V,I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

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一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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更多2SK3062-Z供應(yīng)商 更新時(shí)間2025-4-26 14:02:00