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2SK3230

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The2SK3230issuitableforconverterofECM. FEATURES ?Compactpackage ?Highforwardtransferadmittance 1000μSTYP.(IDSS=100μA) 1600μSTYP.(IDSS=200μA) ?IncludesdiodeandhighresistanceatG-S

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3230

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNELSILICONJUNCTIONFIELDEFFECTTRANSISTOR FORIMPEDANCECONVERTEROFECM DESCRIPTION The2SK3230issuitableforconverterofECM. FEATURES ?Compactpackage ?Highforwardtransferadmittance 1000μSTYP.(IDSS=100μA) 1600μSTYP.(IDSS=200μA) ?Includesdiodeandhigh

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3230B

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The2SK3230BissuitableforconverterofECM.General-purposeproduct. FEATURES ?Lownoise: ?108.5dBTYP.(VDD=2.0V,C=5pF,RL=2.2k?) ?Especiallysuitableforaudioandtelephone ?Smallpackage:SC-89(TUSM)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3230B

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNELSILICONJUNCTIONFIELDEFFECTTRANSISTOR FORIMPEDANCECONVERTEROFECM DESCRIPTION The2SK3230BissuitableforconverterofECM. General-purposeproduct. FEATURES ?Lownoise: ?108.5dBTYP.(VDD=2.0V,C=5pF,RL=2.2kΩ) ?Especiallysuitableforaudioandtelephone

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3230C

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNELSILICONJUNCTIONFIELDEFFECTTRANSISTOR FORIMPEDANCECONVERTEROFECM DESCRIPTION The2SK3230Ccontainsadiodeandhighresistivity betweenitsgatesandsources,forachievingshortstability timeduringpower-on.Inaddition,becauseofitscompact packageandlownoise,the

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3233

Silicon N Channel MOS FET High Speed Power Switching

Features ?Lowon-resistance:RDS(on)=1.1?typ. ?Lowleakagecurrent:IDSS=1μAmax(atVDS=500V) ?Highspeedswitching:tf=15nstyp(atVGS=10V,VDD=250V,ID=2.5A) ?Lowgatecharge:Qg=15nCtyp(atVDD=400V,VGS=10V,ID=5A) ?Avalancheratings

HitachiHitachi Semiconductor

日立日立公司

2SK3233

Silicon N Channel MOS FET High Speed Power Switching

Features ?Lowon-resistance:RDS(on)=1.1?typ. ?Lowleakagecurrent:IDSS=1μAmax(atVDS=500V) ?Highspeedswitching:tf=15nstyp(atVGS=10V,VDD=250V,ID=2.5A) ?Lowgatecharge:Qg=15nCtyp(atVDD=400V,VGS=10V,ID=5A) ?Avalancheratings

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3233-E

Silicon N Channel MOS FET High Speed Power Switching

Features ?Lowon-resistance:RDS(on)=1.1?typ. ?Lowleakagecurrent:IDSS=1μAmax(atVDS=500V) ?Highspeedswitching:tf=15nstyp(atVGS=10V,VDD=250V,ID=2.5A) ?Lowgatecharge:Qg=15nCtyp(atVDD=400V,VGS=10V,ID=5A) ?Avalancheratings

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3234

2SK3234

Features ?Lowon-resistance:RDS(on)=0.65Ωtyp. ?Lowdrainblockingcurrent:IDSS=1μAmax(atVDS=500V) ?Fastswitchingspeed:tf=25nstyp(atVGS=10V,VDD=250V,ID=4A) ?Lowinputdynamiccapacity(Qg):Qg=25nCtyp(VDD=400V,VGS=10V,ID=8A) ?AvalancheW

HitachiHitachi Semiconductor

日立日立公司

2SK3234

Silicon N Channel MOS FET High Speed Power Switching

Features ?Lowon-resistance:RDS(on)=0.65?typ. ?Lowleakagecurrent:IDSS=1μAmax(atVDS=500V) ?Highspeedswitching:tf=25nstyp(atVGS=10V,VDD=250V,ID=4A) ?Lowgatecharge:Qg=25nCtyp(atVDD=400V,VGS=10V,ID=8A) ?Avalancheratings

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    2SK323

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
RENESAS
SOT523
30000000
原裝進(jìn)口中國(guó)百?gòu)?qiáng)元器件分銷企業(yè) 專注RENESAS十年 公司大量RENESAS現(xiàn)貨 歡迎您的咨詢 百年不變 服務(wù)至上
 詢價(jià)
NEC
24+
SOT-523
366000
新進(jìn)庫存/原裝
 詢價(jià)
NEC
24+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!
 詢價(jià)
NEC
23+
SOT-523
30000
原裝正品,假一罰十
 詢價(jià)
NEC
09+
SOT-523
6000
絕對(duì)原裝自己現(xiàn)貨
 詢價(jià)
NEC
24+
SOT523
98000
原裝現(xiàn)貨假一罰十
 詢價(jià)
NEC
24+
6540
原裝現(xiàn)貨/歡迎來電咨詢
 詢價(jià)
NEC
1922+
SOT-523
35689
原裝進(jìn)口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
 詢價(jià)
NEC
23+
SOT-523SC-75USM
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
NEC
22+
SOT-423
5000
全新原裝品牌專營(yíng)
 詢價(jià)
更多2SK323供應(yīng)商 更新時(shí)間2025-4-3 14:49:00

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