首頁 >2SK3569(LBS1MEL,Q)>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=25V(Min) ?ComplementtoType2SB1119 ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?DesignedforLFAmpElectronicGovernorapplications. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SwitchingRegulatorApplications | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
SiliconNChannelMOSTypeSwitchingRegulatorApplications | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(PIE-MOSVI) SwitchingRegulatorApplications ?Lowdrain-sourceON-resistance:RDS(ON)=0.54?(typ.) ?Highforwardtransferadmittance:|Yfs|=8.5S(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) ?Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA |
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