2SK3653C中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION

The 2SK3653C contains a diode and high resistivity

between its gates and sources, for achieving short stability

time during power-on. In addition, because of its compact

package and low noise, the 2SK3653C is especially suitable

for compact ECMs for audio or mobile devices such as cellphones.

FEATURES

? Low noise:

?108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)

? Containing a diode and high resistivity, short stability time is

achieved during power-on.

? Super thin thickness package: 3pXSOF (0814)

t = 0.37 mm TYP.