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2SK3715

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3715isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.0m?MAX.(VGS=10V,ID=38A) RDS(on)2=9.5m?MAX.(VGS=4V,ID=38A) ?LowCiss:Ciss=8400pFTYP. ?Bu

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3715

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=75A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.0mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3715

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3715isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=10V,ID=38A) RDS(on)2=9.5mΩMAX.(VGS=4V,ID=38A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3716

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3716isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=6.5m?MAX.(VGS=10V,ID=30A) RDS(on)2=9.1m?MAX.(VGS=4.5V,ID=30A) ?LowCiss:Ciss=2700pFTYP.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3716

MOS Field Effect Transistor

MOSFieldEffectTransistor Features Superlowon-stateresistance: RDS(on)1=6.5mùMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mùMAX.(VGS=4.5V,ID=30A) LowCiss:Ciss=2700pFTYP. Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SK3716

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3716

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3716isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=6.5mΩMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mΩMAX.(VGS=4.5V,ID=30A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3716-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3716isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=6.5m?MAX.(VGS=10V,ID=30A) RDS(on)2=9.1m?MAX.(VGS=4.5V,ID=30A) ?LowCiss:Ciss=2700pFTYP.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3716-Z

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3716-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3716isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=6.5mΩMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mΩMAX.(VGS=4.5V,ID=30A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    2SK371

  • 制造商：

    Sanken Electric Co Ltd

  • 功能描述：

    MOSFET N-CH 60V TO220S

  • 功能描述：

    MOSFET N-CH 60V TO-220F

  • 制造商：

    ALLEGRO

  • 功能描述：

    MOS FET

  • 制造商：

    Allegro MicroSystems LLC

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS
24+
30000
詢價
TOS
23+
20000
正品原裝貨價格低
 詢價
NEC
2023+
16+
8700
原裝現(xiàn)貨
 詢價
NEC
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
NEC
24+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
NEC
23+
TO-220F
7600
全新原裝現(xiàn)貨
 詢價
NEC
2016+
SOT-523
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
NEC
23+
SC-89
4500
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
 詢價
NEC
23+
TO220F
35890
詢價
NEC
17+
SOT423
6200
100%原裝正品現(xiàn)貨
 詢價
更多2SK371供應(yīng)商 更新時間2025-4-9 16:30:00

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