| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
110kHz,OperationalTransconductanceAmplifierArray Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic | HARRIS Harris Corporation | HARRIS | ||
LOWVFSCHOTTKYRECTIFIER | PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司 | PANJIT | ||
TrenchSchottkyBarrierRectifier | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
3-phase3-line500VACAvailable5-150AForoutputlineonly | SOSHINSoshin electric Co., Ltd. 雙信電機(jī)雙信電機(jī)株式會(huì)社 | SOSHIN | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,105A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,75A,RDS(ON)=6.6mW@VGS=10V. RDS(ON)=9.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,75A,RDS(ON)=6.6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.5mW@VGS=4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,14A,RDS(ON)=7.8m?@VGS=10V. RDS(ON)=11.5m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,14A,RDS(ON)=7.8mW@VGS=10V. RDS(ON)=11.5mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FSC全系列 |
23+ |
TO-220 |
5000 |
原廠(chǎng)授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳 |
詢(xún)價(jià) | ||
FAIRCHILD/仙童 |
2023+ |
TO-220 |
1100 |
原廠(chǎng)全新正品旗艦店優(yōu)勢(shì)現(xiàn)貨 |
詢(xún)價(jià) | ||
FAIRCHILD |
23+ |
4000 |
正品原裝貨價(jià)格低 |
詢(xún)價(jià) | |||
QFN |
3200 |
原裝長(zhǎng)期供貨! |
詢(xún)價(jià) | ||||
SILICON30 |
25+23+ |
QFN |
44896 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢(xún)價(jià) | ||
SILICON3060DC08 |
23+ |
QFN |
3000 |
原裝正品假一罰百!可開(kāi)增票! |
詢(xún)價(jià) | ||
SILICON3060DC08 |
22+ |
QFN |
30000 |
十七年VIP會(huì)員,誠(chéng)信經(jīng)營(yíng)，一手貨源，原裝正品可零售！ |
詢(xún)價(jià) | ||
FM富滿(mǎn) |
2447 |
TO-252 |
105000 |
2500個(gè)/圓盤(pán)一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨, |
詢(xún)價(jià) | ||
JDP/金大鵬 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
FM/富滿(mǎn)電子 |
23+ |
TO-252 |
22820 |
原裝正品，支持實(shí)單 |
詢(xún)價(jià) |
