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35N60C3

CoolMOSTM Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

35N60A

35A 600V N-channel enhanced field effect transistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

DAM35N60F

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM35N60H

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

FCA35N60

600VN-ChannelMOSFET

Description SuperFET?isFarichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Features ?650V@TJ=150°C ?Typ.RDS(on)=0.079? ?Ultralow

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCA35N60

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCA35N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=35A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCH35N60

N-ChannelSuperFET?MOSFET

Description SuperFET?MOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCH35N60

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGW35N60H

DiscreteIGBT(High-SpeedVseries)600V/35A

Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會社

供應(yīng)商型號品牌批號封裝庫存備注價格
INF
24+
TO-3P
163000
一級代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價格合理
 詢價
INFINEON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
Infineon
23+
TO-247
3000
全新原裝
 詢價
2017+
TO247
6528
只做原裝正品假一賠十!
 詢價
TO-3PN
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
Infineon
24+
TO-247
35210
一級代理/放心采購
 詢價
INFINEON/英飛凌
2447
TO-3P
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
INFINEON/英飛凌
23+
TO-3P
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
英飛凌
22+
TO-3P
6000
十年配單,只做原裝
 詢價
INFINEON/英飛凌
22+
TO-3P
50000
只做原裝假一罰十,歡迎咨詢
 詢價
更多35N60供應(yīng)商 更新時間2025-3-29 9:02:00

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