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3N50KL-TMS4-T

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION TheUTC3N50K-MKisanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavala

UTCUnisonic Technologies

友順友順科技股份有限公司

3N50KL-TMS-T

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION TheUTC3N50K-MKisanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavala

UTCUnisonic Technologies

友順友順科技股份有限公司

3N50KL-TN3-R

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION TheUTC3N50K-MKisanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavala

UTCUnisonic Technologies

友順友順科技股份有限公司

3N50KL-TND-R

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION TheUTC3N50K-MKisanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavala

UTCUnisonic Technologies

友順友順科技股份有限公司

3N50K-MK

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION TheUTC3N50K-MKisanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavala

UTCUnisonic Technologies

友順友順科技股份有限公司

3N50L-TN3-R

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

3N50-TO-3

isc N-Channel MOSFET Transistor

?FEATURES ?DrainCurrentID=3A@TC=25℃ ?DrainSourceVoltage- :VDSS=500V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=3.0Ω(Max) ?FastSwitching ?APPLICATIONS ?Switchingpowersupplies,converters,ACandDCmotorcontrols

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

3N50Z

N-Channel 650 V (D-S) Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

3N50Z

3A, 500V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC3N50ZisanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanch

UTCUnisonic Technologies

友順友順科技股份有限公司

3N50ZG

N-Channel 650 V (D-S) Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

詳細(xì)參數(shù)

  • 型號：

    3N50

  • 功能描述：

    TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 15A I(C) | TO-36VAR

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
TOSHIBA
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
NULL
23+
TO-252
6000
專業(yè)優(yōu)勢供應(yīng)
 詢價(jià)
PHI
23+
2800
正品原裝貨價(jià)格低
 詢價(jià)
華晶
25+
TO251252
188600
全新原廠原裝正品現(xiàn)貨 歡迎咨詢
 詢價(jià)
24+
TO-3
10000
詢價(jià)
UTC/友順
2022+
10
全新原裝 貨期兩周
 詢價(jià)
UTC/友順
2022+
TO-220F
32500
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
UTC/友順
23+
TO-220F
79999
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
 詢價(jià)
UTC/友順
2022+
TO-251
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),絕對原裝 假一罰十
 詢價(jià)
U
23+
TO-220F
8400
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
更多3N50供應(yīng)商 更新時(shí)間2025-4-21 11:04:00

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