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DMT3N60-TU

600VN-ChannelPowerMOSFET

DYELECDIYI Electronic Technology Co., Ltd.

迪一電子山東迪一電子科技有限公司

FGD3N60LSD

IGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGD3N60LSD

IGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGD3N60LSDTF

IGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGD3N60LSDTM

IGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGD3N60LSDTM

IGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGD3N60UNDF

UsingadvancedNPTIGBTtechnology,Fairchild???theNPTvIGBTsoffertheoptimumperformanceforlow-powerinverterdrivenapplicationswherelow-lossesandshort-circuitruggednessfeaturesareessential.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB3N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB3N60

ThisN-channelMOSFETSuseadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications.

KERSEMI

Kersemi Electronic Co., Ltd.

FQB3N60C

600VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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6000
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9000
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更多3N60E供應(yīng)商 更新時(shí)間2025-4-5 14:30:00