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AP4301BP-D

DUALOPAMPANDVOLTAGEREFERENCE

GeneralDescription TheAP4301isamonolithicICspecificallydesignedtocontroltheoutputcurrentandvoltagelevelsofswitchmodebatterychargersandpowersupplies. Features ?Inputoffsetvoltage:0.5mV ?Supplycurrent:250μAperOp-Ampat5.0Vsupplyvoltage ?Unitygainbandw

BCDSEMIBCD Semiconductor Manufacturing Limited

新進(jìn)半導(dǎo)體上海新進(jìn)半導(dǎo)體制造有限公司

B4301

SAWRFfilterShortrangedevices

Features ■Packagesize1.4x1.1x0.4mm3 ■PackagecodeQCS5P ■RoHScompatible ■Approximateweight0.003g ■PackageforSurfaceMountTechnology(SMT) ■Ni,gold-platedterminals ■AEC-Q200qualifiedcomponentfamily(operabletemperaturerange–40?Cto+85?C) ■Elect

EPCOSepcos

愛(ài)普科斯

CED4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-6A,RDS(ON)=42m?@VGS=-10V. RDS(ON)=65m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-6.3A,RDS(ON)=44m?@VGS=-10V. RDS(ON)=68m?@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM4301PAPT

P-ChannelEnhancementModeFieldEffectTransistor

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    4301J

  • 制造商：

    Abbatron/HH Smith

  • 功能描述：

    Standoff; Hex; Nylon; 6-32 Thread; 1/4 OD; 5/8 Length

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Abbatron/HHSmith
新
5
全新原裝 貨期兩周
 詢價(jià)
Abbatron / HH Smith
2022+
1
全新原裝 貨期兩周
 詢價(jià)
IR
22+
QFN22
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
QFN22
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
QFN22
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
QFN22
7000
詢價(jià)
TOSHIBA
80+
SOP30
2450
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢價(jià)
SC
23+
QFN
5000
原裝正品,假一罰十
 詢價(jià)
進(jìn)口原裝
23+
QFN20
1094
全新原裝現(xiàn)貨
 詢價(jià)
BB
24+
NA
200
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
更多4301J供應(yīng)商 更新時(shí)間2025-4-5 16:06:00

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