| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
DUALOPAMPANDVOLTAGEREFERENCE GeneralDescription TheAP4301isamonolithicICspecificallydesignedtocontroltheoutputcurrentandvoltagelevelsofswitchmodebatterychargersandpowersupplies. Features ?Inputoffsetvoltage:0.5mV ?Supplycurrent:250μAperOp-Ampat5.0Vsupplyvoltage ?Unitygainbandw | BCDSEMIBCD Semiconductor Manufacturing Limited 新進(jìn)半導(dǎo)體上海新進(jìn)半導(dǎo)體制造有限公司 | BCDSEMI | ||
SAWRFfilterShortrangedevices Features ■Packagesize1.4x1.1x0.4mm3 ■PackagecodeQCS5P ■RoHScompatible ■Approximateweight0.003g ■PackageforSurfaceMountTechnology(SMT) ■Ni,gold-platedterminals ■AEC-Q200qualifiedcomponentfamily(operabletemperaturerange–40?Cto+85?C) ■Elect | EPCOSepcos 愛(ài)普科斯 | EPCOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-40V,-6A,RDS(ON)=42m?@VGS=-10V. RDS(ON)=65m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-40V,-6.3A,RDS(ON)=44m?@VGS=-10V. RDS(ON)=68m?@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
80+ |
SOP30 |
2450 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
詢價(jià) | ||
INFINEON |
23+ |
SOP-14 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
23+ |
SOP-14 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
23+ |
SOP-14 |
7000 |
詢價(jià) | |||
SC |
23+ |
QFN |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
進(jìn)口原裝 |
23+ |
QFN20 |
1094 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
BB |
24+ |
NA |
200 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
BB |
1130 |
優(yōu)勢(shì)庫(kù)存 |
詢價(jià) | ||||
BB |
24+ |
NA |
66800 |
原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源！ |
詢價(jià) | ||
24+ |
233 |
現(xiàn)貨供應(yīng) |
詢價(jià) |
