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4435BZ中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

4435BZ
廠商型號

4435BZ

功能描述

P-Channel PowerTrench? MOSFET -30V, -8.8A, 20m廓

文件大小

288.78 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-15 18:20:00

4435BZ規(guī)格書詳情

General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features

■ Max rDS(on) = 20m? at VGS = -10V, ID = -8.8A

■ Max rDS(on) = 35m? at VGS = -4.5V, ID = -6.7A

■ Extended VGSS range (-25V) for battery applications

■ HBM ESD protection level of ±3.8KV typical (note 3)

■ High performance trench technology for extremely low rDS(on)

■ High power and current handling capability

■ Termination is Lead-free and RoHS compliant

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