4X16E83V中文資料ETC數(shù)據(jù)手冊(cè)PDF規(guī)格書
4X16E83V規(guī)格書詳情
[MEMPHIS]
GENERAL DESCRIPTION
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 4,096 rows by 1,024 columns on the MEM4X16E43VTW. During READ or WRITE cycles, each location is uniquely addressed via the address bits: 12 row-address bits (A0-A11) and 10 column-address bits (A0-A9) on the MEM4X16E43VTW version. In addition, the byte and word accesses are supported via the two CAS# pins (CASL# and CASH#).
FEATURES
? Single +3.3V ±0.3V power supply
? Industry-standard x16 pinout, timing, functions, and package
? 12 row, 10 column addresses (4)
13 row, 9 column addresses (8)
? High-performance CMOS silicon-gate process
? All inputs, outputs and clocks are LVTTL-compatible
? Extended Data-Out (EDO) PAGE MODE access
? 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms
? Self refresh for low-power data retention
產(chǎn)品屬性
- 型號(hào)：
4X16E83V
- 功能描述：
4 MEG x 16 EDO DRAM
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
STARRAM |
23+ |
NA/ |
906 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
J |
NA |
8553 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
4X2901B |
4 |
4 |
詢價(jià) | ||||
EtronTech |
TSOP54 |
608900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
MOT |
23+ |
QFN |
9526 |
詢價(jià) | |||
STARRAM |
10+ |
TSOP86 |
17 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
RAMSUSA |
23+ |
SSOP |
9980 |
價(jià)格優(yōu)勢(shì)、原裝現(xiàn)貨、客戶至上。歡迎廣大客戶來電查詢 |
詢價(jià) | ||
STARRAM |
22+ |
TSOP86 |
31250 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
STARRAM |
2023+ |
TSOP86 |
6895 |
原廠全新正品旗艦店優(yōu)勢(shì)現(xiàn)貨 |
詢價(jià) | ||
STARRAM |
TSOP86 |
貨真價(jià)實(shí),假一罰十 |
25000 |
詢價(jià) |
