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BD647

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. NPNcomplementsareBD643,BD645,BD647

COMSET

Comset Semiconductor

BD647

iscSiliconNPNDarlingtonPowerTransistor

*Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min) *HighDCCurrentGain:hFE=750(Min)@IC=3A *LowSaturationVoltage *ComplementtoTypeBD648

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD647

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Electronic Solutions

伯恩斯

BD647

SILICONDARLINGTONPOWERTRANSISTORS

COMSET

Comset Semiconductor

BD647

SiliconNPNDarlingtonPowerTransistor

Eplbasepowerdarlingtontransistors(62.5W) BD643,BD645,BD647,andBD649aremonolithicNPNSiliconepibasepowerdarlingtontransistorswithdiodeandresistorsinaTO220ABplasticpackage(TOP-66).Thecollectorsofthetwotransistorsareelectricallyconnectedtothemetallicmounting

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD647F

iscSiliconNPNDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BLF647

UHFpowerLDMOStransistor

DESCRIPTION SiliconN-channelenhancementmodelateralD-MOSpush-pulltransistorinaSOT540Apackagewithceramiccap.Thecommonsourceisconnectedtothemountingflange. FEATURES ?Highpowergain ?Easypowercontrol ?Excellentruggedness ?SourceonundersideeliminatesDCisolators

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF647

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF647P

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF647P

BroadbandpowerLDMOStransistor

Generaldescription A200WLDMOSRFpowertransistorforbroadcasttransmitterandindustrial applications.ThetransistorissuitableforthefrequencyrangeHFto1500MHz.The excellentruggednessandbroadbandperformanceofthisdevicemakesitidealfordigital applications. Featuresa

AmpleonAmpleon USA Inc.

安譜隆

詳細(xì)參數(shù)

  • 型號：

    647.S

  • 功能描述：

    General Purpose Tweezers

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16
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