664GI-05LFT

Marking：664GI05L；Package：TSSOP；DIGITAL VIDEO CLOCK SOURCE

Features ?Packagedin16-pinTSSOP ?AvailableinPb(lead)freepackage ?Clockorcrystalinputprovidesflexibility ?LowphasenoisesupportsenhancedSNR ?Lowestjitterinclassat100pstypical ?Exact(0ppm)multiplicationratios ?ImprovedphasenoiseoverICS660 ?ProvidesHig

667M-01LF

Marking：667M01LF；Package：SOIC；HDTV CLOCK SYNTHESIZER

Features ?Packagedin8-pinSOIC ?Pb(lead)freepackage,RoHScompliant ?Inputfrequencyof27MHz ?Zeroppmsynthesiserrorinoutputclock ?3.3V±5operatingsupply ?IdealforHDTVapplicationsandoscillatormanufacturers ?Advanced,lowpower,sub-micronCMOSprocess

667M-01LFT

Marking：667M01LF；Package：SOIC；HDTV CLOCK SYNTHESIZER

Features ?Packagedin8-pinSOIC ?Pb(lead)freepackage,RoHScompliant ?Inputfrequencyof27MHz ?Zeroppmsynthesiserrorinoutputclock ?3.3V±5operatingsupply ?IdealforHDTVapplicationsandoscillatormanufacturers ?Advanced,lowpower,sub-micronCMOSprocess

843S1066DGLF

Marking：66DL；Package：TSSOP；Crystal-to-3.3V LVPECL Frequency Synthesizer

Features ?OnedifferentialLVPECLoutput ?Crystaloscillatorinterfacedesignedfor18pF,20MHzparallel resonantcrystal ?Cycle-to-CycleJitter:12ps(maximum) ?PeriodJitter,RMS:2.8ps(maximum) ?OutputDutyCycle:48–52 ?Full3.3Vsupplymode ?0°Cto70°Cambientoperatingtem

843S1066DGLFT

Marking：66DL；Package：TSSOP；Crystal-to-3.3V LVPECL Frequency Synthesizer

Features ?OnedifferentialLVPECLoutput ?Crystaloscillatorinterfacedesignedfor18pF,20MHzparallel resonantcrystal ?Cycle-to-CycleJitter:12ps(maximum) ?PeriodJitter,RMS:2.8ps(maximum) ?OutputDutyCycle:48–52 ?Full3.3Vsupplymode ?0°Cto70°Cambientoperatingtem

BAS40-06W

Marking：66*；Package：SOT-323；Schottky barrier double diodes

DESCRIPTION PlanarSchottkybarrierdiodesencapsulatedinaSOT323verysmallplasticSMDpackage.Singlediodesanddoublediodeswithdifferentpinningareavailable. FEATURES ?Lowforwardvoltage ?Guardringprotected ?VerysmallSMDpackage ?Lowdiodecapacitance. APPLICATIONS ?U

BAS40-06W

Marking：66*；Package：SOT-323；General-purpose Schottky diodes

Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping

BAS40-06W

Marking：66*；Package：SOT-323；General-purpose Schottky diodes

Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping

BUK6M61-60P

Marking：66160P；Package：LFPAK33；60 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inanLFPAK33packageusingTrench MOSFETtechnology. ThisproducthasbeendesignedandqualifiedtoAECQ101standardforuseinhighperformance automotiveapplications. 2.Featuresandbenefits ?Hightherm

DMG6601LVT

Marking：66G；Package：SOT23-6；N and P-Channel Enhancement Mode Power MOSFET

ProductSummary N-Channel Vps=30V,Ip=4A Ros(on)30mQ@Ves=10V(Typ) Ros(on)50mQ@Ves=-4.5V(Typ) P-Channel Vos=-30V,Ip=3A Ros(on)45mQ@Ves=-10V(Typ) Rosion)85mQ@Ves=-4.5V(Typ)